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|Title:||Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma||Authors:||Chen, J.
|Issue Date:||Jul-2004||Citation:||Chen, J., Yoo, W.J., Tan, Z.Y.L., Wang, Y., Chan, D.S.H. (2004-07). Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (4) : 1552-1558. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1705590||Abstract:||The etching properties of HfO based high-K dielectrics were investigated. The study was carried out by using inductively coupled plasma of Cl 2/HBr/CHF3/CF4/O2. It was The result show that the etching of HfON, HfSiO and HfAlO was strongly dependent on etching properties of each phase in the makeup of the films such as HfO 2 and HfN. It was also found that the fluorine containing plasmas were undesirable for etching of HfO based high-K devices.||Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/83862||ISSN:||07342101||DOI:||10.1116/1.1705590|
|Appears in Collections:||Staff Publications|
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