Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1705590
Title: Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
Authors: Chen, J. 
Yoo, W.J. 
Tan, Z.Y.L.
Wang, Y.
Chan, D.S.H. 
Issue Date: Jul-2004
Citation: Chen, J., Yoo, W.J., Tan, Z.Y.L., Wang, Y., Chan, D.S.H. (2004-07). Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (4) : 1552-1558. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1705590
Abstract: The etching properties of HfO based high-K dielectrics were investigated. The study was carried out by using inductively coupled plasma of Cl 2/HBr/CHF3/CF4/O2. It was The result show that the etching of HfON, HfSiO and HfAlO was strongly dependent on etching properties of each phase in the makeup of the films such as HfO 2 and HfN. It was also found that the fluorine containing plasmas were undesirable for etching of HfO based high-K devices.
Source Title: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
URI: http://scholarbank.nus.edu.sg/handle/10635/83862
ISSN: 07342101
DOI: 10.1116/1.1705590
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Google ScholarTM

Check

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.