Please use this identifier to cite or link to this item:
|Title:||Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma||Authors:||Chen, J.
|Issue Date:||Jul-2004||Citation:||Chen, J., Yoo, W.J., Tan, Z.Y.L., Wang, Y., Chan, D.S.H. (2004-07). Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (4) : 1552-1558. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1705590||Abstract:||The etching properties of HfO based high-K dielectrics were investigated. The study was carried out by using inductively coupled plasma of Cl 2/HBr/CHF3/CF4/O2. It was The result show that the etching of HfON, HfSiO and HfAlO was strongly dependent on etching properties of each phase in the makeup of the films such as HfO 2 and HfN. It was also found that the fluorine containing plasmas were undesirable for etching of HfO based high-K devices.||Source Title:||Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/83862||ISSN:||07342101||DOI:||10.1116/1.1705590|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 17, 2019
WEB OF SCIENCETM
checked on May 8, 2019
checked on May 14, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.