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https://doi.org/10.1116/1.1705590
| Title: | Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma | Authors: | Chen, J. Yoo, W.J. Tan, Z.Y.L. Wang, Y. Chan, D.S.H. |
Issue Date: | Jul-2004 | Citation: | Chen, J., Yoo, W.J., Tan, Z.Y.L., Wang, Y., Chan, D.S.H. (2004-07). Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (4) : 1552-1558. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1705590 | Abstract: | The etching properties of HfO based high-K dielectrics were investigated. The study was carried out by using inductively coupled plasma of Cl 2/HBr/CHF3/CF4/O2. It was The result show that the etching of HfON, HfSiO and HfAlO was strongly dependent on etching properties of each phase in the makeup of the films such as HfO 2 and HfN. It was also found that the fluorine containing plasmas were undesirable for etching of HfO based high-K devices. | Source Title: | Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films | URI: | http://scholarbank.nus.edu.sg/handle/10635/83862 | ISSN: | 07342101 | DOI: | 10.1116/1.1705590 |
| Appears in Collections: | Staff Publications |
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