Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma

Please use this identifier to cite or link to this item: https://doi.org/10.1116/1.1705590

Title:	Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma
Authors:	Chen, J. Yoo, W.J. Tan, Z.Y.L. Wang, Y. Chan, D.S.H.
Issue Date:	Jul-2004
Citation:	Chen, J., Yoo, W.J., Tan, Z.Y.L., Wang, Y., Chan, D.S.H. (2004-07). Investigation of etching properties of HfO based high-K dielectrics using inductively coupled plasma. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films 22 (4) : 1552-1558. ScholarBank@NUS Repository. https://doi.org/10.1116/1.1705590
Abstract:	The etching properties of HfO based high-K dielectrics were investigated. The study was carried out by using inductively coupled plasma of Cl 2/HBr/CHF3/CF4/O2. It was The result show that the etching of HfON, HfSiO and HfAlO was strongly dependent on etching properties of each phase in the makeup of the films such as HfO 2 and HfN. It was also found that the fluorine containing plasmas were undesirable for etching of HfO based high-K devices.
Source Title:	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
URI:	http://scholarbank.nus.edu.sg/handle/10635/83862
ISSN:	07342101
DOI:	10.1116/1.1705590
Appears in Collections:	Staff Publications

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