Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
 
 
Email
elecshd@nus.edu.sg
 

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Type:  Article

Results 1-20 of 164 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
11-Oct-1997A cleaning model for removal of particles due to laser-induced thermal expansion of substrate surfaceLu, Y.-F. ; Song, W.-D. ; Ye, K.-D. ; Lee, Y.-P.; Chan, D.S.H. ; Low, T.-S. 
2Mar-1986A comparative study of extraction methods for solar cell model parametersChan, D.S.H. ; Phillips, J.R.; Phang, J.C.H. 
31994A direct and accurate method for the extraction of diffusion length and surface recombination velocity from an EBIC line scanOng, V.K.S. ; Phang, J.C.H. ; Chan, D.S.H. 
4Aug-2004A dual-metal gate integration process for CMOS with sub-1-nm EOT HfO2 by using HfN replacement gateRen, C.; Yu, H.Y. ; Kang, J.F.; Wang, X.P.; Ma, H.H.H. ; Yeo, Y.-C. ; Chan, D.S.H. ; Li, M.-F. ; Kwong, D.-L.
528-Apr-2006A dynamic random access memory based on a conjugated copolymer containing electron-donor and -acceptor moietiesLing, Q.-D. ; Song, Y.; Lim, S.-L.; Teo, E.Y.-H. ; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
6Aug-2007A flexible polymer memory deviceLi, L. ; Ling, Q.-D. ; Lim, S.-L.; Tan, Y.-P.; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G. 
7Jul-1997A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET'sLou, C.L.; Chim, W.K. ; Chan, D.S.H. ; Pan, Y.
8Oct-1995A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETsLeang, S.E.; Chim, W.K. ; Chan, D.S.H. 
9Jul-1986A review of curve fitting error criteria for solar cell I-V characteristicsPhang, J.C.H. ; Chan, D.S.H. 
10Sep-1993A simulation model for electron irradiation induced specimen charging in a scanning electron microscopeChan, D.S.H. ; Sim, K.S. ; Phang, J.C.H. ; Balk, L.J.; Uchikawa, Y.; Hasselbach, F.; Dinnis, A.R.
11Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
121-Nov-1998A theoretical model for laser cleaning of microparticles in a thin liquid layerLu, Y.-F. ; Zhang, Y.; Song, W.-D. ; Chan, D.S.H. 
131997A theoretical model for laser removal of particles from solid surfacesLu, Y.F. ; Song, W.D. ; Ang, B.W.; Hong, M.H. ; Chan, D.S.H. ; Low, T.S. 
141-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
152009Aluminum-doped gadolinium oxides as blocking layer for improved charge retention in charge-trap-type nonvolatile memory devicesPu, J. ; Chan, D.S.H. ; Kim, S.-J.; Cho, B.J.
16Jun-1993An energy dependent model for type I magnetic contrast in the scanning electron microscopeChim, W.K. ; Chan, D.S.H. ; Phang, J.C.H. ; Low, T.S. ; Thirumalai, S.
171999An improved drain-current-conductance method with substrate back-biasingTan, C.B.; Chim, W.K. ; Chan, D.S.H. ; Lou, C.L.
182009An organic-based diode-memory device with rectifying property for crossbar memory array applicationsTeo, E.Y.H. ; Zhang, C. ; Lim, S.L.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
19Feb-1987ANALYTICAL METHODS FOR THE EXTRACTION OF SOLAR-CELL SINGLE- AND DOUBLE-DIODE MODEL PARAMETERS FROM I-V CHARACTERISTICS.Chan, Daniel S.H. ; Phang, Jacob C.H. 
202008Bilayer memory device based on a conjugated copolymer and a carbon nanotube/polyaniline compositeLi, L. ; Ling, Q.-D. ; Zhu, C. ; Chan, D.S.H. ; Kang, E.-T. ; Neoh, K.-G.