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|Title:||A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's||Authors:||Lou, C.L.
|Issue Date:||Jul-1997||Citation:||Lou, C.L., Chim, W.K., Chan, D.S.H., Pan, Y. (1997-07). A new DC drain-current-conductance method (DCCM) for the characterization of effective mobilty (ueff) and series resistances (Rs, Rd) of fresh and hot-carrier stressed graded junction MOSFET's. IEEE Electron Device Letters 18 (7) : 327-329. ScholarBank@NUS Repository. https://doi.org/10.1109/55.596926||Abstract:||A simple new DC technique is developed to extract the gate bias dependent effective channel mobility (μeff) and series resistances (Rs and Rd) of graded junction n- and p-channel MOSFET's. This technique is found to be accurate and effective for devices with differing channel lengths and also for devices after nonuniform hot-carrier degradation. The parameter values extracted provide further insight into the damage mechanisms of hot-carrier stressed graded junction nMOSFET's and are usable in circuit and reliability simulation. This technique is especially useful for the optimization of hot-carrier resistant structures of submicrometer MOSFET's.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/80276||ISSN:||07413106||DOI:||10.1109/55.596926|
|Appears in Collections:||Staff Publications|
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