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|Title:||A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs||Authors:||Leang, S.E.
|Issue Date:||Oct-1995||Citation:||Leang, S.E.,Chim, W.K.,Chan, D.S.H. (1995-10). A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs. Solid State Electronics 38 (10) : 1791-1798. ScholarBank@NUS Repository.||Abstract:||A new gate current measurement method is proposed for the characterization of hot-carrier induced degradation in MOSFETs. This method requires a much shorter measurement time to obtain the Ig-Vg curve of the MOSFETs as compared to the conventional floating-gate technique, and therefore has a lower risk of degrading the test device during the measurement process. This paper also discusses the appropriateness of using a high-frequency (100 kHz-1 MHz) measurement to obtain the gate capacitance of MOSFETs when applying the floating-gate technique to obtain the device gate current. © 1995.||Source Title:||Solid State Electronics||URI:||http://scholarbank.nus.edu.sg/handle/10635/80277||ISSN:||00381101|
|Appears in Collections:||Staff Publications|
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