Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/80277
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dc.titleA new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
dc.contributor.authorLeang, S.E.
dc.contributor.authorChim, W.K.
dc.contributor.authorChan, D.S.H.
dc.date.accessioned2014-10-07T02:55:45Z
dc.date.available2014-10-07T02:55:45Z
dc.date.issued1995-10
dc.identifier.citationLeang, S.E.,Chim, W.K.,Chan, D.S.H. (1995-10). A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs. Solid State Electronics 38 (10) : 1791-1798. ScholarBank@NUS Repository.
dc.identifier.issn00381101
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/80277
dc.description.abstractA new gate current measurement method is proposed for the characterization of hot-carrier induced degradation in MOSFETs. This method requires a much shorter measurement time to obtain the Ig-Vg curve of the MOSFETs as compared to the conventional floating-gate technique, and therefore has a lower risk of degrading the test device during the measurement process. This paper also discusses the appropriateness of using a high-frequency (100 kHz-1 MHz) measurement to obtain the gate capacitance of MOSFETs when applying the floating-gate technique to obtain the device gate current. © 1995.
dc.sourceScopus
dc.typeArticle
dc.contributor.departmentELECTRICAL ENGINEERING
dc.description.sourcetitleSolid State Electronics
dc.description.volume38
dc.description.issue10
dc.description.page1791-1798
dc.description.codenSSELA
dc.identifier.isiutNOT_IN_WOS
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