Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/80277
Title: A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs
Authors: Leang, S.E.
Chim, W.K. 
Chan, D.S.H. 
Issue Date: Oct-1995
Source: Leang, S.E.,Chim, W.K.,Chan, D.S.H. (1995-10). A new gate current measurement technique for the characterization of hot-carrier induced degradation in MOSFETs. Solid State Electronics 38 (10) : 1791-1798. ScholarBank@NUS Repository.
Abstract: A new gate current measurement method is proposed for the characterization of hot-carrier induced degradation in MOSFETs. This method requires a much shorter measurement time to obtain the Ig-Vg curve of the MOSFETs as compared to the conventional floating-gate technique, and therefore has a lower risk of degrading the test device during the measurement process. This paper also discusses the appropriateness of using a high-frequency (100 kHz-1 MHz) measurement to obtain the gate capacitance of MOSFETs when applying the floating-gate technique to obtain the device gate current. © 1995.
Source Title: Solid State Electronics
URI: http://scholarbank.nus.edu.sg/handle/10635/80277
ISSN: 00381101
Appears in Collections:Staff Publications

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