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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

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Department:  COLLEGE OF DESIGN AND ENGINEERING

Results 41-60 of 96 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
412005Lanthanide-incorporated metal nitrides with tunable work function and good thermal stability for NMOS devicesRen, C.; Chan, D.S.H. ; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Kwong, D.-L.
421997Laser cleaning of microparticles - Theoretical prediction of threshold laser fluenceLu, Y.F. ; Song, W.D. ; Hong, M.H. ; Chan, D.S.H. ; Low, T.S. 
431997Laser cleaning of microparticles - Theoretical prediction of threshold laser fluenceLu, Y.F. ; Song, W.D. ; Hong, M.H. ; Chan, D.S.H. ; Low, T.S. 
44Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
45Mar-2006Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complexSong, Y.; Ling, Q.D. ; Zhu, C. ; Kang, E.T. ; Chan, D.S.H. ; Wang, Y.H.; Kwong, D.L.
46Dec-1992Modelling techniques for the quantification of some electron beam induced phenomenaChim, W.K. ; Chan, D.S.H. ; Low, T.S. ; Phang, J.C.H. ; Sim, K.S. ; Pey, K.L. ; Dinnis, A.R.; Holt, D.B.; Nakamae, K.; Schottler, M.
47Dec-1992Modelling techniques for the quantification of some electron beam induced phenomenaChim, W.K. ; Chan, D.S.H. ; Low, T.S. ; Phang, J.C.H. ; Sim, K.S. ; Pey, K.L. ; Dinnis, A.R.; Holt, D.B.; Nakamae, K.; Schottler, M.
482008Molecular conformation-dependent memory effects in non-conjugated polymers with pendant carbazole moietiesLim, S.L.; Ling, Q. ; Eric Teo, Y.H. ; Zhu, C.X. ; Daniel Chan, S.H. ; Kang, E.T. ; Neon, K.G. 
492007Near-IR photon emission spectroscopy on strained and unstrained 60 nm silicon nMOSFETsTan, S.L.; Ang, K.W.; Toh, K.H.; Isakov, D.; Chua, C.M.; Koh, L.S.; Yeo, Y.C. ; Chan, D.S.H. ; Phang, J.C.H. 
502004Negative U traps in HfO 2 gate dielectrics and frequency dependence of dynamic BTI in MOSFETsShen, C.; Li, M.F. ; Wang, X.P.; Yu, H.Y. ; Feng, Y.P. ; Lim, A.T.-L. ; Yeo, Y.C. ; Chan, D.S.H. ; Kwong, D.L.
5123-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
5223-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
53Jun-2006Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groupsTeo, E.Y.H. ; Ling, Q.D. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
54Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
552-Jan-2007Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60Ling, Q.-D. ; Lim, S.-L.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
56Feb-2010Origin of different dependences of open-circuit voltage on the electrodes in layered and bulk heterojunction organic photovoltaic cellsZhang, C. ; Tong, S.-W. ; Jiang, C.-Y.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
57Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
5815-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
5928-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
60Oct-2008Polymer electronic memories: Materials, devices and mechanismsLing, Q.-D. ; Liaw, D.-J.; Zhu, C. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G.