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Chan Siu Hung,Daniel

rp07001

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Full Name
Chan Siu Hung,Daniel
(not current staff)
Variants
Chan, Daniel S.H.
CHAN, DANIEL S. H.
Chan, D.S.-H.
Chan, D.S.H.
CHAN SIU HUNG DANIEL
CHAN, DANIEL SIU HUNG
Daniel Chan, S.H.
Chan, D.
CHAN, D. S. H.
 
Main Affiliation
 
Faculty
 
Email
elecshd@nus.edu.sg
 

Publications

Refined By:
Department:  COLLEGE OF DESIGN AND ENGINEERING
Author:  Chan, D.S.-H.
Type:  Article

Results 21-40 of 63 (Search time: 0.051 seconds).

Issue DateTitleAuthor(s)
212009Enhancement in open circuit voltage induced by deep interface hole traps in polymer-fullerene bulk heterojunction solar cellsZhang, C. ; Tong, S.W. ; Zhu, C. ; Jiang, C.; Kang, E.T. ; Chan, D.S.H. 
22Jun-1991Error voltage components in quantitative voltage contrast measurement systemsChan, D.S.H. ; Low, T.S. ; Chim, W.K. ; Phang, J.C.H. 
23Oct-2004Evidence and understanding of ALD HfO2-Al2O3 laminate MIM capacitors outperforming sandwich counterpartsDing, S.-J. ; Hu, H.; Zhu, C. ; Li, M.F. ; Kim, S.J. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Du, A.Y.; Chin, A.; Kwong, D.-L.
24Jun-2006Gate-first germanium nMOSFET with CVD HfO2 gate dielectric and silicon surface passivationWu, N.; Zhang, Q.; Chan, D.S.H. ; Balasubramanian, N.; Zhu, C. 
25Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
26Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
2720-Aug-2008Improvement in the hole collection of polymer solar cells by utilizing gold nanoparticle buffer layerTong, S.W. ; Zhang, C.F. ; Jiang, C.Y.; Liu, G. ; Ling, Q.D. ; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
28Mar-2006Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complexSong, Y.; Ling, Q.D. ; Zhu, C. ; Kang, E.T. ; Chan, D.S.H. ; Wang, Y.H.; Kwong, D.L.
29Dec-1992Modelling techniques for the quantification of some electron beam induced phenomenaChim, W.K. ; Chan, D.S.H. ; Low, T.S. ; Phang, J.C.H. ; Sim, K.S. ; Pey, K.L. ; Dinnis, A.R.; Holt, D.B.; Nakamae, K.; Schottler, M.
30Dec-1992Modelling techniques for the quantification of some electron beam induced phenomenaChim, W.K. ; Chan, D.S.H. ; Low, T.S. ; Phang, J.C.H. ; Sim, K.S. ; Pey, K.L. ; Dinnis, A.R.; Holt, D.B.; Nakamae, K.; Schottler, M.
3123-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
3223-Feb-2005Non-volatile polymer memory device based on a novel copolymer of N-vinylcarbazole and Eu-complexed vinylbenzoateLing, Q. ; Song, Y.; Ding, S.J. ; Zhu, C. ; Chan, D.S.H. ; Kwong, D.-L.; Kang, E.-T. ; Neoh, K.-G. 
33Jun-2006Non-volatile WORM memory device based on an acrylate polymer with electron donating carbazole pendant groupsTeo, E.Y.H. ; Ling, Q.D. ; Song, Y.; Tan, Y.P.; Wang, W.; Kang, E.T. ; Chan, D.S.H. ; Zhu, C. 
34Nov-2004Nonvolatile flash memory device using Ge nanocrystals embedded in HfAlO High-κ tunneling and control oxides: Device fabrication and electrical performanceChen, J.H. ; Wang, Y.Q.; Yoo, W.J. ; Yeo, Y.-C. ; Samudra, G. ; Chan, D.S.H. ; Du, A.Y.; Kwong, D.-L.
352-Jan-2007Nonvolatile polymer memory device based on bistable electrical switching in a thin film of poly(N-vinylcarbazole) with covalently bonded C60Ling, Q.-D. ; Lim, S.-L.; Song, Y.; Zhu, C.-X. ; Chan, D.S.-H. ; Kang, E.-T. ; Neoh, K.-G. 
36Feb-2010Origin of different dependences of open-circuit voltage on the electrodes in layered and bulk heterojunction organic photovoltaic cellsZhang, C. ; Tong, S.-W. ; Jiang, C.-Y.; Kang, E.-T. ; Chan, D.S.H. ; Zhu, C. 
37Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
3815-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
3928-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
40Dec-1997Removal of submicron particles from nickel-phosphorus surfaces by pulsed laser irradiationLu, Y.F. ; Song, W.D. ; Ye, K.D. ; Hong, M.H. ; Liu, D.M.; Chan, D.S.H. ; Low, T.S.