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Cho Byung-Jin

rp04188

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Full Name
Cho Byung-Jin
(not current staff)
Variants
Cho, Byung Jin
CHO, BYUNG JIN
Cho, B.
Cho, B.J.
Cho, B.C.
Cho, Byung-Jin
Byung, J.C.
Cho, B.-J.
 
Main Affiliation
 
Faculty
 
Email
elebjcho@nus.edu.sg
 

Publications

Results 81-100 of 144 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
812007Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platformWang, J. ; Loh, W.Y.; Zang, H.; Yu, M.B.; Chua, K.T.; Loh, T.H.; Ye, J.D.; Yang, R.; Wang, X.L.; Lee, S.J. ; Cho, B.J. ; Lo, G.Q.; Kwong, D.L.
2May-2006Interface configuration and Fermi-level pinning of fully silicided gate and high-K dielectric stackJoo, M.S. ; Park, C.S. ; Cho, B.J. ; Balasubramanian, N.; Kwong, D.-L.
32000Investigation of quasi-breakdown mechanism in ultra-thin gate oxidesGuan, H.; He, Y.D. ; Li, M.F. ; Cho, B.J. ; Dong, Z.
4May-2002Investigation of quasi-breakdown mechanism through post-quasi-breakdown thermal annealingLoh, W.Y. ; Cho, B.J. ; Li, M.F. 
52000Investigation of reliability degradation of ultra-thin gate oxides irradiated under electron-beam lithography conditionsChong, P.F.; Cho, B.J. ; Chor, E.F. ; Joo, M.S.; Yeo, I.S.
6Jul-1998Isolation process induced wafer warpageJang, S.-A.; Yeo, I.-S.; Kim, Y.-B.; Cho, B.-J. ; Lee, S.-K.
7Jul-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A.; Kwong, D.-L.
8Feb-2004Laser annealing of silicon nanocrystal films formed by pulsed-laser depositionTan, C.F.; Chen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Zeng, J.N. 
9Jul-2004Laser annealing of silicon nanocrystal films prepared by pulsed-laser depositionChen, X.Y.; Lu, Y.F. ; Wu, Y.H. ; Cho, B.J. ; Yang, B.J.; Liew, T.Y.F. 
102002Laser microprocessing in microelectronics, data storage and photonicsLu, Y.F. ; Song, W.D. ; Ren, Z.M.; An, C.W.; Liu, D.M.; Huang, S.M.; Wang, W.J. ; Hong, M.H. ; Chong, T.C. ; Cho, B.J. ; Zeng, J.N. ; Tan, C.F.
11Apr-2003Localized oxide degradation in ultrathin gate dielectric and its statistical analysisLoh, W.Y. ; Cho, B.J. ; Li, M.F. ; Chan, D.S.H. ; Ang, C.H.; Zheng, J.Z.; Kwong, D.L.
122007Low energy N2 ion bombardment for removal of (Hf O2) x (SiON)1-x in dilute HFHwang, W.S.; Cho, B.-J. ; Chan, D.S.H. ; Yoo, W.J.
132003Material and electrical characterization of HfO2 films for MIM capacitors applicationHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
1415-May-2003Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambientChen, X.Y.; Lu, Y.F.; Wu, Y.H. ; Cho, B.J. ; Liu, M.H. ; Dai, D.Y.; Song, W.D. 
152006Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrateYeo, C.C.; Lee, M.H.; Liu, C.W.; Choi, K.J.; Lee, T.W.; Cho, B.J. 
16Sep-2005Metal-insulator-metal RF bypass capacitor using niobium oxide (Nb2O5) with HfO2/Al2O3 barriersKim, S.-J. ; Cho, B.J. ; Yu, M.B.; Li, M.-F. ; Xiong, Y.-Z.; Zhu, C. ; Chin, A. ; Kwong, D.-L.
178-Jan-2008Method of fabricating a CMOS device with dual metal gate electrodesPARK, CHANG SEO ; CHO, BYUNG JIN ; BALASUBRAMANIAN, NARAYANAN T. 
18Feb-2003MIM capacitors using atomic-layer-deposited high-κ (HfO2)1-x(Al2O3)x dielectricsHu, H.; Zhu, C. ; Yu, X.; Chin, A. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.; Liu, X.; Winkler, J.
192003MIM capacitors with HfO2 and HfAlOx for Si RF and analog applicationsYu, X.; Zhu, C. ; Hu, H.; Chin, A.; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.; Foo, P.D.; Yu, M.B.
20Nov-2004MOS characteristics of substituted Al gate on high-κ dielectricPark, C.S. ; Cho, B.J. ; Kwong, D.-L.