Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate

Please use this identifier to cite or link to this item: https://doi.org/10.1109/EDSSC.2005.1635217

Title:	Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate
Authors:	Yeo, C.C. Lee, M.H. Liu, C.W. Choi, K.J. Lee, T.W. Cho, B.J.
Issue Date:	2006
Citation:	Yeo, C.C.,Lee, M.H.,Liu, C.W.,Choi, K.J.,Lee, T.W.,Cho, B.J. (2006). Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC : 107-110. ScholarBank@NUS Repository. https://doi.org/10.1109/EDSSC.2005.1635217
Abstract:	Metal gate/High-K slack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field. © 2005 IEEE.
Source Title:	2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC
URI:	http://scholarbank.nus.edu.sg/handle/10635/70917
ISBN:	0780393392
DOI:	10.1109/EDSSC.2005.1635217
Appears in Collections:	Staff Publications

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