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|Title:||Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate||Authors:||Yeo, C.C.
|Issue Date:||2006||Citation:||Yeo, C.C.,Lee, M.H.,Liu, C.W.,Choi, K.J.,Lee, T.W.,Cho, B.J. (2006). Metal gate/High-K dielectric stack on Si cap/ultra-thin pure Ge epi/Si substrate. 2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC : 107-110. ScholarBank@NUS Repository. https://doi.org/10.1109/EDSSC.2005.1635217||Abstract:||Metal gate/High-K slack CMOSFETs on ultra thin Ge epi channel on relaxed Si, capped with ultra thin Si (Si/Ge/Si substrate) were evaluated. NMOSFET shows enhanced mobility at low field while pMOSFET shows degraded peak mobility, with enhancement observed only at high field. © 2005 IEEE.||Source Title:||2005 IEEE Conference on Electron Devices and Solid-State Circuits, EDSSC||URI:||http://scholarbank.nus.edu.sg/handle/10635/70917||ISBN:||0780393392||DOI:||10.1109/EDSSC.2005.1635217|
|Appears in Collections:||Staff Publications|
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