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|Title:||Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient||Authors:||Chen, X.Y.
|Issue Date:||15-May-2003||Citation:||Chen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Liu, M.H., Dai, D.Y., Song, W.D. (2003-05-15). Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient. Journal of Applied Physics 93 (10 1) : 6311-6319. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1569033||Abstract:||The different mechanisms of photoluminescence (PL) of silicon nanocrystals due to quantum confinement effect (QCE) and interface states were studied. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The PL band at 2.55 eV showed vibronic structures with periodic spacing of 97±9 meV.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/50975||ISSN:||00218979||DOI:||10.1063/1.1569033|
|Appears in Collections:||Staff Publications|
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