Please use this identifier to cite or link to this item:
|Title:||Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient||Authors:||Chen, X.Y.
|Issue Date:||15-May-2003||Citation:||Chen, X.Y., Lu, Y.F., Wu, Y.H., Cho, B.J., Liu, M.H., Dai, D.Y., Song, W.D. (2003-05-15). Mechanisms of photoluminescence from silicon nanocrystals formed by pulsed-laser deposition in argon and oxygen ambient. Journal of Applied Physics 93 (10 1) : 6311-6319. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1569033||Abstract:||The different mechanisms of photoluminescence (PL) of silicon nanocrystals due to quantum confinement effect (QCE) and interface states were studied. Si nanocrystals were formed by pulsed-laser deposition in inert argon and reactive oxygen gas. The PL band at 2.55 eV showed vibronic structures with periodic spacing of 97±9 meV.||Source Title:||Journal of Applied Physics||URI:||http://scholarbank.nus.edu.sg/handle/10635/50975||ISSN:||00218979||DOI:||10.1063/1.1569033|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 7, 2021
WEB OF SCIENCETM
checked on Feb 26, 2021
checked on Mar 2, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.