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https://scholarbank.nus.edu.sg/handle/10635/62360
| Title: | Isolation process induced wafer warpage | Authors: | Jang, S.-A. Yeo, I.-S. Kim, Y.-B. Cho, B.-J. Lee, S.-K. |
Issue Date: | Jul-1998 | Citation: | Jang, S.-A.,Yeo, I.-S.,Kim, Y.-B.,Cho, B.-J.,Lee, S.-K. (1998-07). Isolation process induced wafer warpage. Electrochemical and Solid-State Letters 1 (1) : 46-48. ScholarBank@NUS Repository. | Abstract: | Wafer warpage behavior during a local oxidation of silicon isolation process was investigated. Anisotropic etching of the front side nitride produced unbalanced stress states between front and back side nitride films, and caused a large wafer warpage. The maximum warpage was observed after field oxidation due to a wedge-effect of field oxide on the front side. Plastic deformation was shown to occur when the maximum warpage after field oxidation exceeded a critical value, although the warpage dramatically decreased after nitride stripping. © 1998 The Electrochemical Society, Inc. | Source Title: | Electrochemical and Solid-State Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/62360 | ISSN: | 10990062 |
| Appears in Collections: | Staff Publications |
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