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https://scholarbank.nus.edu.sg/handle/10635/70633
| Title: | Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform | Authors: | Wang, J. Loh, W.Y. Zang, H. Yu, M.B. Chua, K.T. Loh, T.H. Ye, J.D. Yang, R. Wang, X.L. Lee, S.J. Cho, B.J. Lo, G.Q. Kwong, D.L. |
Issue Date: | 2007 | Citation: | Wang, J.,Loh, W.Y.,Zang, H.,Yu, M.B.,Chua, K.T.,Loh, T.H.,Ye, J.D.,Yang, R.,Wang, X.L.,Lee, S.J.,Cho, B.J.,Lo, G.Q.,Kwong, D.L. (2007). Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform. IEEE International Conference on Group IV Photonics GFP : 52-54. ScholarBank@NUS Repository. | Abstract: | Tensile-strained Ge photodetector is realized on Si-substrate using novel Si/SiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4nA), responsivity (190mA/W) and high speed (>5GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility. ©2007 IEEE. | Source Title: | IEEE International Conference on Group IV Photonics GFP | URI: | http://scholarbank.nus.edu.sg/handle/10635/70633 | ISSN: | 19492081 |
| Appears in Collections: | Staff Publications |
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