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|Title:||Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform|
|Authors:||Wang, J. |
|Source:||Wang, J.,Loh, W.Y.,Zang, H.,Yu, M.B.,Chua, K.T.,Loh, T.H.,Ye, J.D.,Yang, R.,Wang, X.L.,Lee, S.J.,Cho, B.J.,Lo, G.Q.,Kwong, D.L. (2007). Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform. IEEE International Conference on Group IV Photonics GFP : 52-54. ScholarBank@NUS Repository.|
|Abstract:||Tensile-strained Ge photodetector is realized on Si-substrate using novel Si/SiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4nA), responsivity (190mA/W) and high speed (>5GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility. ©2007 IEEE.|
|Source Title:||IEEE International Conference on Group IV Photonics GFP|
|Appears in Collections:||Staff Publications|
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