Please use this identifier to cite or link to this item: http://scholarbank.nus.edu.sg/handle/10635/70633
Title: Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform
Authors: Wang, J. 
Loh, W.Y.
Zang, H.
Yu, M.B.
Chua, K.T.
Loh, T.H.
Ye, J.D.
Yang, R.
Wang, X.L.
Lee, S.J. 
Cho, B.J. 
Lo, G.Q.
Kwong, D.L.
Issue Date: 2007
Source: Wang, J.,Loh, W.Y.,Zang, H.,Yu, M.B.,Chua, K.T.,Loh, T.H.,Ye, J.D.,Yang, R.,Wang, X.L.,Lee, S.J.,Cho, B.J.,Lo, G.Q.,Kwong, D.L. (2007). Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform. IEEE International Conference on Group IV Photonics GFP : 52-54. ScholarBank@NUS Repository.
Abstract: Tensile-strained Ge photodetector is realized on Si-substrate using novel Si/SiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4nA), responsivity (190mA/W) and high speed (>5GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility. ©2007 IEEE.
Source Title: IEEE International Conference on Group IV Photonics GFP
URI: http://scholarbank.nus.edu.sg/handle/10635/70633
ISSN: 19492081
Appears in Collections:Staff Publications

Show full item record
Files in This Item:
There are no files associated with this item.

Page view(s)

36
checked on Dec 16, 2017

Google ScholarTM

Check


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.