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Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/70633
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dc.titleIntegration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform
dc.contributor.authorWang, J.
dc.contributor.authorLoh, W.Y.
dc.contributor.authorZang, H.
dc.contributor.authorYu, M.B.
dc.contributor.authorChua, K.T.
dc.contributor.authorLoh, T.H.
dc.contributor.authorYe, J.D.
dc.contributor.authorYang, R.
dc.contributor.authorWang, X.L.
dc.contributor.authorLee, S.J.
dc.contributor.authorCho, B.J.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-06-19T03:14:23Z
dc.date.available2014-06-19T03:14:23Z
dc.date.issued2007
dc.identifier.citationWang, J.,Loh, W.Y.,Zang, H.,Yu, M.B.,Chua, K.T.,Loh, T.H.,Ye, J.D.,Yang, R.,Wang, X.L.,Lee, S.J.,Cho, B.J.,Lo, G.Q.,Kwong, D.L. (2007). Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platform. IEEE International Conference on Group IV Photonics GFP : 52-54. ScholarBank@NUS Repository.
dc.identifier.issn19492081
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/70633
dc.description.abstractTensile-strained Ge photodetector is realized on Si-substrate using novel Si/SiGe compliant layer with two-step Ge-process. Monolithic integration of p-i-n detectors with low dark current (0.4nA), responsivity (190mA/W) and high speed (>5GHz) on Ge-CMOS platform is demonstrated, with Ge pMOSFET showing 2X Si hole mobility. ©2007 IEEE.
dc.sourceScopus
dc.typeConference Paper
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentPHYSICS
dc.description.sourcetitleIEEE International Conference on Group IV Photonics GFP
dc.description.page52-54
dc.identifier.isiutNOT_IN_WOS
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