Full Name
Thye Shen, Andrew Wee
Variants
Wee, A.T.
Wee, A.T.S.
Wee A.T.S.
Thye Shen Wee, A.
Wee, A.T.S
Thye-Shen Wee, A.
Wee A.T.S
Wee, S.
Wee, A.T.-S.
Wee, A.T.A.
WEE, ANDREW THYE SHEN
Wee, T.S.
Wee, A.
Wee, Andrew T.S.
Wee, T.S.A.
Wee Thye Shen, Andrew
 
Main Affiliation
 
Faculty
 
Email
phyweets@nus.edu.sg
 

Refined By:
Date Issued:  [2000 TO 2023]
Date Issued:  [2000 TO 2009]
Date Issued:  2002

Results 1-20 of 23 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
13-Jun-2002Comparison of nitrogen compositions in the as-grown GaNxAs 1-x on GaAs measured by high-resolution x-ray diffraction and secondary-ion mass spectroscopyFan, W.J.; Yoon, S.F.; Ng, T.K.; Wang, S.Z.; Loke, W.K.; Liu, R. ; Wee, A. 
21-Aug-2002Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Osipowicz, T. ; See, A.; Chan, L.
320-Jan-2002Crystalline phase separation of InGaN layer materials prepared by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, A.T.S. 
4Sep-2002Evaluation of the silicon capping technique in SIMSNg, C.M.; Wee, A.T.S. ; Huan, C.H.A.; Ho, C.S.; Yakovlev, N.; See, A. 
514-Feb-2002Growth mechanisms in thin film epitaxy of Si/SiGe from hydridesZhang, J.; Woods, N.J.; Breton, G.; Price, R.W.; Hartell, A.D.; Lau, G.S.; Liu, R. ; Wee, A.T.S. ; Tok, E.S. 
6Jun-2002Infrared reflection investigation of ion-implanted and post-implantation-annealed epitaxially grown 6H-SiCChang, W.; Feng, Z.C. ; Lin, J. ; Liu, R. ; Wee, A.T.S. ; Tone, K.; Zhao, J.H.
72002Investigation of metal-organic chemical vapor deposited copper diffusion in tantalum after annealingLoh, S.W.; Zhang, D.H.; Liu, R. ; Li, C.Y.; Wee, A.T.S. 
811-Nov-2002Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/siliconChong, Y.F.; Pey, K.L. ; Wee, A.T.S. ; Thompson, M.O.; Tung, C.H.; See, A.
915-Oct-2002Low-energy electron diffraction study of oxygen-induced reconstructions on Cu(210)Guo, Y.P. ; Tan, K.C.; Wang, H.Q. ; Huan, C.H.A. ; Wee, A.T.S. 
101-Jan-2002Method to form MOS transistors with shallow junctions using laser annealingCHONG, YUNG FU; PEY, KIN LEONG ; SEE, ALEX ; WEE, ANDREW THYE SHEN 
111-Jan-2002Microstructural characterization of rf sputtered polycrystalline silicon germanium filmsChoi, W.K. ; Teh, L.K.; Bera, L.K. ; Chim, W.K. ; Wee, A.T.S. ; Jie, Y.X. 
121-Mar-2002Miscibility and interactions in poly(2,2,3,3,3-pentafluoropropyl methacrylate-co-4-vinylpyridine)/poly(p-vinylphenol) blendsHuang, H.L.; Goh, S.H. ; Wee, A.T.S. 
13Jul-2002On STM imaging of GaAs(0 0 1)-(n × 6) surface reconstructions: Does the (6 × 6) structure exist?Xu, H. ; Li, Y.G.; Wee, A.T.S. ; Huan, C.H.A. ; Tok, E.S. 
1420-Nov-2002Oxidation study of rf sputtered amorphous and polycrstalline silicon germanium filmsLeoy, C.C.; Kan, E.W.H.; Arianto, J.; Choi, W.K. ; Wee, A.T.S. ; Liu, Y.J. 
15Feb-2002Phase separation in Zn-doped InGaN grown by metalorganic chemical vapor depositionFeng, Z.C.; Yang, T.R.; Liu, R. ; Wee, T.S.A. 
1615-Nov-2002Photoelectron emission and Raman scattering studies of nitrogenated tetrahedral amorphous carbon filmsShi, J.R.; Wang, J.P.; Wee, A.T.S. ; Yeo, C.B.; Cheng, C.T.; Ueda, M.; Tomioka, S.; Ohsako, J.
1715-Feb-2002Rapid thermal oxidation of radio frequency sputtered polycrystalline silicon germanium filmsChoi, W.K. ; Natarajan, A.; Bera, L.K. ; Wee, A.T.S. ; Liu, Y.J. 
186-May-2002Self-assembly of Si nanoclusters on 6H-SiC(0001)-(3×3) reconstructed surfaceOng, W.J.; Tok, E.S. ; Xu, H. ; Wee, A.T.S. 
19May-2002SIMS backside depth profiling of ultrashallow implants using silicon-on-insulator substratesYeo, K.L.; Wee, A.T.S. ; Liu, R. ; Ng, C.M.; See, A.
2020-Jan-2002Sims depth profiling analysis of Cu/Ta/SiO2 interfacial diffusion at different annealing temperatureLiu, L. ; Gong, H. ; Wang, Y. ; Wee, A.T.S. ; Liu, R.