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|Title:||Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon||Authors:||Chong, Y.F.
|Issue Date:||11-Nov-2002||Citation:||Chong, Y.F., Pey, K.L., Wee, A.T.S., Thompson, M.O., Tung, C.H., See, A. (2002-11-11). Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon. Applied Physics Letters 81 (20) : 3786-3788. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1521579||Abstract:||A report on the complex solidification structures formed during laser thermal processing (LTP) of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack was presented. The titanium atoms were found to diffuse through the entire polycrystalline silicon layer during irradiation. The results showed that a thick a-Si layer was formed upon LTP in the presence of titanium.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82609||ISSN:||00036951||DOI:||10.1063/1.1521579|
|Appears in Collections:||Staff Publications|
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