Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.1521579
Title: Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon
Authors: Chong, Y.F.
Pey, K.L. 
Wee, A.T.S. 
Thompson, M.O.
Tung, C.H.
See, A.
Issue Date: 11-Nov-2002
Citation: Chong, Y.F., Pey, K.L., Wee, A.T.S., Thompson, M.O., Tung, C.H., See, A. (2002-11-11). Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon. Applied Physics Letters 81 (20) : 3786-3788. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1521579
Abstract: A report on the complex solidification structures formed during laser thermal processing (LTP) of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack was presented. The titanium atoms were found to diffuse through the entire polycrystalline silicon layer during irradiation. The results showed that a thick a-Si layer was formed upon LTP in the presence of titanium.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82609
ISSN: 00036951
DOI: 10.1063/1.1521579
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