Please use this identifier to cite or link to this item:
|Title:||Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon|
|Citation:||Chong, Y.F., Pey, K.L., Wee, A.T.S., Thompson, M.O., Tung, C.H., See, A. (2002-11-11). Laser-induced amorphization of silicon during pulsed-laser irradiation of Tin/Ti/polycrystalline silicon/SiO2/silicon. Applied Physics Letters 81 (20) : 3786-3788. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1521579|
|Abstract:||A report on the complex solidification structures formed during laser thermal processing (LTP) of a titanium nitride/titanium/polycrystalline silicon/silicon dioxide/silicon film stack was presented. The titanium atoms were found to diffuse through the entire polycrystalline silicon layer during irradiation. The results showed that a thick a-Si layer was formed upon LTP in the presence of titanium.|
|Source Title:||Applied Physics Letters|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Nov 10, 2018
WEB OF SCIENCETM
checked on Oct 15, 2018
checked on Oct 5, 2018
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.