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|Title:||Oxidation study of rf sputtered amorphous and polycrstalline silicon germanium films||Authors:||Leoy, C.C.
|Issue Date:||20-Nov-2002||Citation:||Leoy, C.C.,Kan, E.W.H.,Arianto, J.,Choi, W.K.,Wee, A.T.S.,Liu, Y.J. (2002-11-20). Oxidation study of rf sputtered amorphous and polycrstalline silicon germanium films. International Journal of Modern Physics B 16 (28-29) : 4224-4227. ScholarBank@NUS Repository.||Abstract:||Oxidation study of rf sputtered amorphous and polycrystalline silicon germanium (Si1-xGex) film which was conducted using infrared spectroscopy (FTIR). The oxidation results showed linear oxidation rate of amorphous Si1-xGex and polycrystalline Si1-xGex films in the dry oxygen ambient did not depend on the Ge concentration. We found that Ge nanocrystals were formed from mixed (Si, Ge)O2 oxides when annealed in forming gas (10%H2+N2) while pure N2 showed formation of Ge clusters.||Source Title:||International Journal of Modern Physics B||URI:||http://scholarbank.nus.edu.sg/handle/10635/84065||ISSN:||02179792|
|Appears in Collections:||Staff Publications|
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