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Title: On STM imaging of GaAs(0 0 1)-(n × 6) surface reconstructions: Does the (6 × 6) structure exist?
Authors: Xu, H. 
Li, Y.G.
Wee, A.T.S. 
Huan, C.H.A. 
Tok, E.S. 
Keywords: Gallium arsenide
Low energy electron diffraction (LEED)
Scanning tunneling microscopy
Surface relaxation and reconstruction
Surface thermodynamics (including phase transitions)
X-ray photoelectron spectroscopy
Issue Date: Jul-2002
Citation: Xu, H.,Li, Y.G.,Wee, A.T.S.,Huan, C.H.A.,Tok, E.S. (2002-07). On STM imaging of GaAs(0 0 1)-(n × 6) surface reconstructions: Does the (6 × 6) structure exist?. Surface Science 513 (2) : 249-255. ScholarBank@NUS Repository.
Abstract: The ultrahigh vacuum scanning tunneling microscope (UHV-STM) was employed to investigate the evolution of GaAs(0 0 1)-(n × 6) surface reconstructions. The (n × 6) surface reconstructions have been referred to as As-rich transitional phases comprising of (1 × 6), (2 × 6), (3 × 6) and (6 × 6) reconstructions. During the evolution from (n × 6) to the Ga-rich (4 × 2) reconstruction, our dual-bias (n × 6) STM images reveal one alternating single As dimer chain with a periodicity giving n = 2; and a pair of Ga dimer rows between the As chains with a periodicity of n = 3, which has not been previously reported. A new (6 × 6) reconstruction model is proposed based on the atomic resolution dual bias STM images obtained; and we discuss whether such (6 × 6) reconstructions exist in the light of all STM data published to date. © 2002 Elsevier Science B.V. All rights reserved.
Source Title: Surface Science
ISSN: 00396028
DOI: 10.1016/S0039-6028(02)01820-4
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