1. ScholarBank@NUS

Lee Sungjoo

rp01794

Collaboration Map View Statistics Email Alert RSS Feed

Profile

Full Name
Lee Sungjoo
(not current staff)
Variants
Sung-Joo, L.E.E.
Lee, S.
Lee, S.J.
LEE, SUNGJOO
Lee, S.-J.
 
Main Affiliation
 
Faculty
 
Email
elelsj@nus.edu.sg
 

Publications

Results 21-40 of 83 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
212008Etching of TiN-based gates for advanced complementary metal-oxide- semiconductor devicesBliznetsov, V.; Singh, N.; Kumar, R.; Balasubramanian, N.; Guo, P.; Lee, S.J. ; Cai, Y.
2May-2008Evanescent-coupled Ge p-i-n photodetectors on Si-waveguide with SEG-Ge and comparative study of lateral and vertical p-i-n configurationsWang, J. ; Loh, W.Y.; Chua, K.T.; Zang, H.; Xiong, Y.Z.; Loh, T.H.; Yu, M.B.; Lee, S.J. ; Lo, G.-Q.; Kwong, D.-L.
32006Fabrication of high Ge content SiGe layer on Si by Ge condensation techniqueBalakumar, S.; Jun Wei, T.; Tung, C.H.; Lo, G.Q.; Nguyen, H.S.; Fong, C.S.; Agarwal, A.; Kumar, R.; Balasubramanian, N.; Lee, S.J. ; Kwong, D.L.
424-May-2004Formation of sige nanocrystals in HfO 2 using in situ chemical vapor deposition for memory applicationsGupta, R.; Yoo, W.J. ; Wang, Y.; Tan, Z.; Samudra, G. ; Lee, S. ; Chan, D.S.H. ; Loh, K.P. ; Bera, L.K.; Balasubramanian, N.; Kwong, D.-L.
52007GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivationGao, F.; Lee, S.J. ; Chi, D.Z.; Balakumar, S.; Kwong, D.-L.
62006GaAs p- and n-MOS devices integrated with novel passivation (plasma nitridation and AlN-surface passivation) techniques and ALD-HfO2/TaN gate stackGao, F.; Lee, S.J. ; Li, R.; Whang, S.J. ; Balakumar, S.; Chi, D.Z.; Kean, C.C.; Vicknesh, S.; Tung, C.H.; Kwong, D.-L.
710-May-2006Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structureGao, F.; Lee, S.J. ; Balakumar, S.; Du, A.; Foo, Y.-L.; Kwong, D.-L.
8Jan-2011Ge-photodetectors for Si-based optoelectronic integrationWang, J. ; Lee, S. 
9Jan-2011Germanium nanowire metal-oxide-semiconductor field-effect transistor fabricated by complementary-metal-oxide-semiconductor-compatible processPeng, J.W.; Singh, N.; Lo, G.Q.; Bosman, M.; Ng, C.M.; Lee, S.J. 
102004Germanium p- & n-MOSFETs fabricated with novel surface passivation (plasma-PH 3 and thin AlN) and TaN/HfO 2 gate stackWhang, S.J. ; Lee, S.J. ; Gao, F.; Wu, N.; Zhu, C.X. ; Pan, J.S.; Tang, L.J.; Kwong, D.L.
11Feb-2005Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gateZhu, S. ; Li, R.; Lee, S.J. ; Li, M.F. ; Du, A.; Singh, J.; Zhu, C. ; Chin, A.; Kwong, D.L.
122005High germanium content strained SGOI by oxidation of amorphous SiGe film on SOI substratesGao, F.; Balakumar, S.; Balasubramanian, N.; Lee, S.J. ; Tung, C.H.; Kumar, R.; Sudhiranjan, T.; Foo, Y.L.; Kwong, D.-L.
132007High quality single crystal Al-catalyzed Si nanowireWhang, S.J. ; Lee, S.J. ; Yang, W.; Cho, B.J. ; Liew, Y.F.; Li, K.; Bera, L.K.; Kwong, D.L.
142011High-k integration and interface engineering for III-V MOSFETsOh, H.J. ; Sumarlina, A.B.S.; Lee, S.J. 
151-Dec-2008High-speed metal-germanium-metal configured PIN-like Ge-photodetector under photovoltaic mode and with dopant-segregated Schottky-contact engineeringZang, H.; Lee, S. ; Yu, M.; Loh, W.Y.; Wang, J. ; Lo, G.-Q.; Kwong, D.-L.
16Nov-2007Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budgetLoh, W.Y.; Wang, J. ; Ye, J.D.; Yang, R.; Nguyen, H.S.; Chua, K.T.; Song, J.F.; Loh, T.H.; Xiong, Y.Z.; Lee, S.J. ; Yu, M.B.; Lo, G.Q.; Kwong, D.L.
172008Improved carrier injection in gate-all-around Schottky barrier silicon nanowire field-effect transistorsPeng, J.W.; Lee, S.J. ; Liang, G.C.A. ; Singh, N.; Zhu, S.Y.; Lo, G.Q.; Kwong, D.L.
182007Integration of tensile-strained Ge p-i-n photodetector on advanced CMOS platformWang, J. ; Loh, W.Y.; Zang, H.; Yu, M.B.; Chua, K.T.; Loh, T.H.; Ye, J.D.; Yang, R.; Wang, X.L.; Lee, S.J. ; Cho, B.J. ; Lo, G.Q.; Kwong, D.L.
192007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
202010Interface engineering for InGaAs n-MOSFET application using plasma PH 3-N2 passivationOh, H.-J. ; Suleiman, S.A.B.; Lee, S.