Please use this identifier to cite or link to this item:
|Title:||Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure||Authors:||Gao, F.
Solid phase epitaxy
|Issue Date:||10-May-2006||Citation:||Gao, F., Lee, S.J., Balakumar, S., Du, A., Foo, Y.-L., Kwong, D.-L. (2006-05-10). Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure. Thin Solid Films 504 (1-2) : 69-72. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.043||Abstract:||We report growth of Si1 - xGex/Si and Ge on insulator by Ge diffusion and SPE (solid phase epitaxy). Different annealing conditions were carried out and evaluated by X-ray diffraction. Ge diffusion and SPE growth of Ge on Si are observed after annealing at 800 °C. EDX (electron dispersive X-ray) composition analysis shows that the top 100 Å Si 1 - xGex layer is quite uniform with Ge content variation of less than 2%. TEM (transmission electron microscopy) picture shows no crystal orientation misalignment between the Si and the top Si1 - xGe x layer. This simple and cost-effective process can be used to make Si1 - xGex /Si substrate for high-mobility metal oxide semiconductor field effect transistor application. In addition, Ge on insulator structure was achieved by SPE lateral growth on pre-patterned SiO2.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/83757||ISSN:||00406090||DOI:||10.1016/j.tsf.2005.09.043|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Mar 2, 2021
WEB OF SCIENCETM
checked on Feb 22, 2021
checked on Mar 1, 2021
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.