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|Title:||Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure||Authors:||Gao, F.
Solid phase epitaxy
|Issue Date:||10-May-2006||Citation:||Gao, F., Lee, S.J., Balakumar, S., Du, A., Foo, Y.-L., Kwong, D.-L. (2006-05-10). Ge diffusion and solid phase epitaxy growth to form Si 1 - XGex/Si and Ge on insulator structure. Thin Solid Films 504 (1-2) : 69-72. ScholarBank@NUS Repository. https://doi.org/10.1016/j.tsf.2005.09.043||Abstract:||We report growth of Si1 - xGex/Si and Ge on insulator by Ge diffusion and SPE (solid phase epitaxy). Different annealing conditions were carried out and evaluated by X-ray diffraction. Ge diffusion and SPE growth of Ge on Si are observed after annealing at 800 °C. EDX (electron dispersive X-ray) composition analysis shows that the top 100 Å Si 1 - xGex layer is quite uniform with Ge content variation of less than 2%. TEM (transmission electron microscopy) picture shows no crystal orientation misalignment between the Si and the top Si1 - xGe x layer. This simple and cost-effective process can be used to make Si1 - xGex /Si substrate for high-mobility metal oxide semiconductor field effect transistor application. In addition, Ge on insulator structure was achieved by SPE lateral growth on pre-patterned SiO2.||Source Title:||Thin Solid Films||URI:||http://scholarbank.nus.edu.sg/handle/10635/83757||ISSN:||00406090||DOI:||10.1016/j.tsf.2005.09.043|
|Appears in Collections:||Staff Publications|
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