Please use this identifier to cite or link to this item:
|Title:||GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation||Authors:||Gao, F.
|Issue Date:||2007||Citation:||Gao, F., Lee, S.J., Chi, D.Z., Balakumar, S., Kwong, D.-L. (2007). GaAs metal-oxide-semiconductor device with HfO2/TaN gate stack and thermal nitridation surface passivation. Applied Physics Letters 90 (25) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2749840||Abstract:||Oxides induced Fermi level pinning at the interface between the GaAs and high-k gate dielectric is a major obstacle for developing high performance GaAs metal-oxide-semiconductor (MOS) devices. In this letter, thermal nitridation treatment on GaAs surface prior to the high-k deposition is proposed to solve the issue of interface pinning. It is found that an optimized nitride layer formed during the thermal nitridation surface treatment can effectively suppress the oxides formation and minimize the Fermi level pinning at the interface between the GaAs and HfO2. By using thermal nitridation treatment and in situ metal-organic chemical vapor deposition HfO2 as high-k gate dielectric, GaAs MOS capacitor with improved capacitance-voltage characteristics and reduced gate leakage current is achieved. ©2007 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82396||ISSN:||00036951||DOI:||10.1063/1.2749840|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on May 21, 2019
WEB OF SCIENCETM
checked on May 13, 2019
checked on May 12, 2019
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.