Please use this identifier to cite or link to this item:
|Title:||High-k integration and interface engineering for III-V MOSFETs||Authors:||Oh, H.J.
|Issue Date:||2011||Citation:||Oh, H.J., Sumarlina, A.B.S., Lee, S.J. (2011). High-k integration and interface engineering for III-V MOSFETs. ECS Transactions 35 (4) : 481-495. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3572300||Abstract:||In this work, we report the comprehensive study of performance enhancement of InGaAs n-MOSFET by plasma PH3 passivation. The calibrated plasma PH3 passivation of the InGaAs surface before CVD high-k dielectric deposition significantly improves interface quality, resulting in suppressed frequency dispersion in C-V, increase in drive-current with high electron mobility, and excellent thermal stability. ©The Electrochemical Society.||Source Title:||ECS Transactions||URI:||http://scholarbank.nus.edu.sg/handle/10635/83798||ISBN:||9781566778657||ISSN:||19385862||DOI:||10.1149/1.3572300|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.