Fabrication of high Ge content SiGe layer on Si by Ge condensation technique

Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2006.251050

Title:	Fabrication of high Ge content SiGe layer on Si by Ge condensation technique
Authors:	Balakumar, S. Jun Wei, T. Tung, C.H. Lo, G.Q. Nguyen, H.S. Fong, C.S. Agarwal, A. Kumar, R. Balasubramanian, N. Lee, S.J. Kwong, D.L.
Issue Date:	2006
Citation:	Balakumar, S.,Jun Wei, T.,Tung, C.H.,Lo, G.Q.,Nguyen, H.S.,Fong, C.S.,Agarwal, A.,Kumar, R.,Balasubramanian, N.,Lee, S.J.,Kwong, D.L. (2006). Fabrication of high Ge content SiGe layer on Si by Ge condensation technique. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 301-305. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2006.251050
Source Title:	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI:	http://scholarbank.nus.edu.sg/handle/10635/70278
ISBN:	1424402069
DOI:	10.1109/IPFA.2006.251050
Appears in Collections:	Staff Publications

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