Please use this identifier to cite or link to this item:
|Title:||Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget||Authors:||Loh, W.Y.
|Issue Date:||Nov-2007||Citation:||Loh, W.Y., Wang, J., Ye, J.D., Yang, R., Nguyen, H.S., Chua, K.T., Song, J.F., Loh, T.H., Xiong, Y.Z., Lee, S.J., Yu, M.B., Lo, G.Q., Kwong, D.L. (2007-11). Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget. IEEE Electron Device Letters 28 (11) : 984-986. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.906814||Abstract:||This letter reports on the impact of selective epitaxial germanium, specifically its local strain effects, on highperformance p-i-n photodetectors for near-infrared applications. By combining a thin compliant Si epitaxial layer (∼6 nm) with SiGe buffer (10-15 nm), we demonstrated a high-quality Ge film (∼150 nm) prepared by two-step growth. Without using high-temperature cyclic anneal, Ge films with smooth surface (root mean square = ∼0.67 nm) and low dislocation density (4 × 106 cm-2) have been produced. The Si buffer locally enhances the tensile strain (e = 0.63%) in Ge while slightly suppressing the dark current by half to 0.12 μA (with circular ring area = 1230 μm2 and spacing = 2 μm). A lateral p-i-n Ge photodetector has been demonstrated with enhanced photoresponse of ∼190 mA/W at 1520 nm and a 3-dB bandwidth of 5.2 GHz at 1 V. © 2007 IEEE.||Source Title:||IEEE Electron Device Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/82497||ISSN:||07413106||DOI:||10.1109/LED.2007.906814|
|Appears in Collections:||Staff Publications|
Show full item record
Files in This Item:
There are no files associated with this item.
checked on Apr 9, 2020
WEB OF SCIENCETM
checked on Mar 24, 2020
checked on Mar 29, 2020
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.