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https://doi.org/10.1109/LED.2007.906814
Title: | Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget | Authors: | Loh, W.Y. Wang, J. Ye, J.D. Yang, R. Nguyen, H.S. Chua, K.T. Song, J.F. Loh, T.H. Xiong, Y.Z. Lee, S.J. Yu, M.B. Lo, G.Q. Kwong, D.L. |
Keywords: | Ge-on-silicon Heterojunctions Near-infrared Optical communications Photodetector |
Issue Date: | Nov-2007 | Citation: | Loh, W.Y., Wang, J., Ye, J.D., Yang, R., Nguyen, H.S., Chua, K.T., Song, J.F., Loh, T.H., Xiong, Y.Z., Lee, S.J., Yu, M.B., Lo, G.Q., Kwong, D.L. (2007-11). Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget. IEEE Electron Device Letters 28 (11) : 984-986. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.906814 | Abstract: | This letter reports on the impact of selective epitaxial germanium, specifically its local strain effects, on highperformance p-i-n photodetectors for near-infrared applications. By combining a thin compliant Si epitaxial layer (∼6 nm) with SiGe buffer (10-15 nm), we demonstrated a high-quality Ge film (∼150 nm) prepared by two-step growth. Without using high-temperature cyclic anneal, Ge films with smooth surface (root mean square = ∼0.67 nm) and low dislocation density (4 × 106 cm-2) have been produced. The Si buffer locally enhances the tensile strain (e = 0.63%) in Ge while slightly suppressing the dark current by half to 0.12 μA (with circular ring area = 1230 μm2 and spacing = 2 μm). A lateral p-i-n Ge photodetector has been demonstrated with enhanced photoresponse of ∼190 mA/W at 1520 nm and a 3-dB bandwidth of 5.2 GHz at 1 V. © 2007 IEEE. | Source Title: | IEEE Electron Device Letters | URI: | http://scholarbank.nus.edu.sg/handle/10635/82497 | ISSN: | 07413106 | DOI: | 10.1109/LED.2007.906814 |
Appears in Collections: | Staff Publications |
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