Please use this identifier to cite or link to this item:
https://doi.org/10.1109/LED.2007.906814
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dc.title | Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget | |
dc.contributor.author | Loh, W.Y. | |
dc.contributor.author | Wang, J. | |
dc.contributor.author | Ye, J.D. | |
dc.contributor.author | Yang, R. | |
dc.contributor.author | Nguyen, H.S. | |
dc.contributor.author | Chua, K.T. | |
dc.contributor.author | Song, J.F. | |
dc.contributor.author | Loh, T.H. | |
dc.contributor.author | Xiong, Y.Z. | |
dc.contributor.author | Lee, S.J. | |
dc.contributor.author | Yu, M.B. | |
dc.contributor.author | Lo, G.Q. | |
dc.contributor.author | Kwong, D.L. | |
dc.date.accessioned | 2014-10-07T04:30:05Z | |
dc.date.available | 2014-10-07T04:30:05Z | |
dc.date.issued | 2007-11 | |
dc.identifier.citation | Loh, W.Y., Wang, J., Ye, J.D., Yang, R., Nguyen, H.S., Chua, K.T., Song, J.F., Loh, T.H., Xiong, Y.Z., Lee, S.J., Yu, M.B., Lo, G.Q., Kwong, D.L. (2007-11). Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget. IEEE Electron Device Letters 28 (11) : 984-986. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.906814 | |
dc.identifier.issn | 07413106 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/82497 | |
dc.description.abstract | This letter reports on the impact of selective epitaxial germanium, specifically its local strain effects, on highperformance p-i-n photodetectors for near-infrared applications. By combining a thin compliant Si epitaxial layer (∼6 nm) with SiGe buffer (10-15 nm), we demonstrated a high-quality Ge film (∼150 nm) prepared by two-step growth. Without using high-temperature cyclic anneal, Ge films with smooth surface (root mean square = ∼0.67 nm) and low dislocation density (4 × 106 cm-2) have been produced. The Si buffer locally enhances the tensile strain (e = 0.63%) in Ge while slightly suppressing the dark current by half to 0.12 μA (with circular ring area = 1230 μm2 and spacing = 2 μm). A lateral p-i-n Ge photodetector has been demonstrated with enhanced photoresponse of ∼190 mA/W at 1520 nm and a 3-dB bandwidth of 5.2 GHz at 1 V. © 2007 IEEE. | |
dc.description.uri | http://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.906814 | |
dc.source | Scopus | |
dc.subject | Ge-on-silicon | |
dc.subject | Heterojunctions | |
dc.subject | Near-infrared | |
dc.subject | Optical communications | |
dc.subject | Photodetector | |
dc.type | Article | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.contributor.department | INSTITUTE OF MICROELECTRONICS | |
dc.description.doi | 10.1109/LED.2007.906814 | |
dc.description.sourcetitle | IEEE Electron Device Letters | |
dc.description.volume | 28 | |
dc.description.issue | 11 | |
dc.description.page | 984-986 | |
dc.description.coden | EDLED | |
dc.identifier.isiut | 000250524200016 | |
Appears in Collections: | Staff Publications |
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