Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.906814
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dc.titleImpact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget
dc.contributor.authorLoh, W.Y.
dc.contributor.authorWang, J.
dc.contributor.authorYe, J.D.
dc.contributor.authorYang, R.
dc.contributor.authorNguyen, H.S.
dc.contributor.authorChua, K.T.
dc.contributor.authorSong, J.F.
dc.contributor.authorLoh, T.H.
dc.contributor.authorXiong, Y.Z.
dc.contributor.authorLee, S.J.
dc.contributor.authorYu, M.B.
dc.contributor.authorLo, G.Q.
dc.contributor.authorKwong, D.L.
dc.date.accessioned2014-10-07T04:30:05Z
dc.date.available2014-10-07T04:30:05Z
dc.date.issued2007-11
dc.identifier.citationLoh, W.Y., Wang, J., Ye, J.D., Yang, R., Nguyen, H.S., Chua, K.T., Song, J.F., Loh, T.H., Xiong, Y.Z., Lee, S.J., Yu, M.B., Lo, G.Q., Kwong, D.L. (2007-11). Impact of local strain from selective epitaxial germanium with thin Si/SiGe buffer on high-performance p-i-n photodetectors with a low thermal budget. IEEE Electron Device Letters 28 (11) : 984-986. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.906814
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82497
dc.description.abstractThis letter reports on the impact of selective epitaxial germanium, specifically its local strain effects, on highperformance p-i-n photodetectors for near-infrared applications. By combining a thin compliant Si epitaxial layer (∼6 nm) with SiGe buffer (10-15 nm), we demonstrated a high-quality Ge film (∼150 nm) prepared by two-step growth. Without using high-temperature cyclic anneal, Ge films with smooth surface (root mean square = ∼0.67 nm) and low dislocation density (4 × 106 cm-2) have been produced. The Si buffer locally enhances the tensile strain (e = 0.63%) in Ge while slightly suppressing the dark current by half to 0.12 μA (with circular ring area = 1230 μm2 and spacing = 2 μm). A lateral p-i-n Ge photodetector has been demonstrated with enhanced photoresponse of ∼190 mA/W at 1520 nm and a 3-dB bandwidth of 5.2 GHz at 1 V. © 2007 IEEE.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2007.906814
dc.sourceScopus
dc.subjectGe-on-silicon
dc.subjectHeterojunctions
dc.subjectNear-infrared
dc.subjectOptical communications
dc.subjectPhotodetector
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.contributor.departmentINSTITUTE OF MICROELECTRONICS
dc.description.doi10.1109/LED.2007.906814
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume28
dc.description.issue11
dc.description.page984-986
dc.description.codenEDLED
dc.identifier.isiut000250524200016
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