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Chunxiang Zhu

rp01634

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Full Name
Chunxiang Zhu
Variants
Zhu, C.-X.
Zhu, C.X.
ZHU, CHUNXIANG
Zhu Chunxiang
Zhu, C.
 
Main Affiliation
 
Faculty
 
Email
elezhucx@nus.edu.sg
 

Publications

Results 121-140 of 218 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
121Aug-2004Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectricKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Zhu, C. ; Yu, M.B.; Narayanan, B.; Chin, A.; Kwong, D.-L.
122Dec-2004Improvements on surface carrier mobility and electrical stability of MOSFETs using HfTaO gate dielectricYu, X.; Zhu, C. ; Yu, M.; Kwong, D.-L.
12310-May-2013In situ synthesis and nonvolatile rewritable-memory effect of polyaniline-functionalized graphene oxideZhang, B.; Chen, Y.; Ren, Y.; Xu, L.-Q.; Liu, G. ; Kang, E.-T. ; Wang, C.; Zhu, C.-X. ; Neoh, K.-G. 
124Nov-2003Integrated Antennas on Si With over 100 GHz Performance, Fabricated Using an Optimized Proton Implantation ProcessChan, K.T.; Chin, A.; Lin, Y.D.; Chang, C.Y.; Zhu, C.X. ; Li, M.F. ; Kwong, D.L.; McAlister, S.; Duh, D.S.; Lin, W.J.
5Nov-2005Integrated high-κ (κ ∼ 19) MIM capacitor with Cu/ low-κ interconnects for RF applicationYu, M.B.; Xiong, Y.Z.; Kim, S.-J. ; Balakumar, S.; Zhu, C. ; Li, M.-F. ; Cho, B.-J. ; Lo, G.Q.; Balasubramanian, N.; Kwong, D.-L.
62009Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memoryFu, J.; Singh, N.; Zhu, C. ; Lo, G.-Q.; Kwong, D.-L.
72008Interface engineering for high-k/Ge gate stackXie, R.; Zhu, C. 
8Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
92009Interface-engineered high-mobility high-κ/Ge pMOSFETs with 1-nm equivalent oxide thicknessXie, R.; Phung, T.H.; He, W. ; Yu, M.; Zhu, C. 
102003Investigation of Performance Limits of Germanium Double-Gated MOSFETsLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
11Jul-2003Lanthanide (Tb)-doped HfO2 for high-density MIM capacitorsKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Zhu, C. ; Chin, A.; Kwong, D.-L.
122005Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function differenceYu, D.S.; Chin, A. ; Wu, C.H.; Li, M.-F. ; Zhu, C. ; Wang, S.J.; Yoo, W.J. ; Hung, B.F.; McAlister, S.P.
132010Low temperature metal induced lateral crystallization of Ge using germanide forming metalsPhung, T.H.; Xie, R.; Tripathy, S.; Yu, M.; Zhu, C. 
14Apr-2010Low temperature metal-induced lateral crystallization of Si 1-xGex using silicide/germanide-forming-metalsPhung, T.H.; Xie, R.; Tripathy, S.; Yu, M.; Zhu, C. 
15Oct-2004Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrodeZhu, S. ; Yu, H.Y. ; Chen, J.D. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
162008Low temperature poly-germanium growth process on insulating substrate using palladium-induced lateral crystallizationXie, R.; Chen, W.; Mingbin, Y.; Ann, O.S.; Tripathy, S.; Zhu, C. 
172004Low workfunction fully suicided gate on SiO2/Si and LaAlO 3/GOI n-MOSFETsYu, D.S.; Chin, A.; Hung, B.F.; Chen, W.J.; Zhu, C.X. ; Li, M.-F. ; Zhu, S.Y. ; Kwong, D.L.
182003Material and electrical characterization of HfO2 films for MIM capacitors applicationHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
192010Mechanism investigation and structure design of organic solar cells for improved energy conversion efficiencyZhang, C. ; Lin, Z.; Kang, E.T. ; Zhu, C. 
20Mar-2006Memory performance of a thin-film device based on a conjugated copolymer containing fluorene and chelated europium complexSong, Y.; Ling, Q.D. ; Zhu, C. ; Kang, E.T. ; Chan, D.S.H. ; Wang, Y.H.; Kwong, D.L.