Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2009.2019254
Title: Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory
Authors: Fu, J.
Singh, N.
Zhu, C. 
Lo, G.-Q.
Kwong, D.-L.
Keywords: Gate-all-around (GAA)
High-κ
Nanowire
Nonvolatile memory
TaN/Al2O3/HfO2/SiO2/Si (TAHOS)
Issue Date: 2009
Citation: Fu, J., Singh, N., Zhu, C., Lo, G.-Q., Kwong, D.-L. (2009). Integration of high-κ dielectrics and metal gate on gate-all-around si-nanowire-based architecture for high-speed nonvolatile charge-trapping memory. IEEE Electron Device Letters 30 (6) : 662-664. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2009.2019254
Abstract: This letter, for the first time, presents a metal high-κhigh-κ-oxide silicon-type charge-trapping nonvolatile memory fabricated on an advanced gate-all-around nanowire architecture with a top-down process. The high-κ materials are integrated with a high work-function TaN gate electrode. The fabricated Si nanowire TaN/ Al2O3/HfO2/SiO2/Si (TAHOS) memory can achieve a higher speed at a lower voltage compared with a similar wire-based SONOS device. For instance, at a 13-V programming pulse, the TAHOS memory device resulted in a Vth shift of 3.8 V in 10 μs, while the SONOS took a period of 1 ms to produce a similar shift. Faster program-and-erase speed, particularly the much improved erasing speed in the TAHOS device, could be ascribed to the enhanced electric-field drop in the tunnel oxide in addition to the suppressed gate-electron injection. In addition, good memory-reliability properties could also be observed in the nanowire TAHOS charge-trapping memory. © 2009 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82550
ISSN: 07413106
DOI: 10.1109/LED.2009.2019254
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