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|Title:||Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference||Authors:||Yu, D.S.
|Issue Date:||2005||Citation:||Yu, D.S.,Chin, A.,Wu, C.H.,Li, M.-F.,Zhu, C.,Wang, S.J.,Yoo, W.J.,Hung, B.F.,McAlister, S.P. (2005). Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 634-637. ScholarBank@NUS Repository.||Abstract:||Metallic diffusion through high-k HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φm,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φm,eff of 4.15 and 4.9 eV are also obtained in Yb xSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature. © 2005 IEEE.||Source Title:||Technical Digest - International Electron Devices Meeting, IEDM||URI:||http://scholarbank.nus.edu.sg/handle/10635/83881||ISBN:||078039268X||ISSN:||01631918|
|Appears in Collections:||Staff Publications|
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