Please use this identifier to cite or link to this item:
https://scholarbank.nus.edu.sg/handle/10635/83881
DC Field | Value | |
---|---|---|
dc.title | Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference | |
dc.contributor.author | Yu, D.S. | |
dc.contributor.author | Chin, A. | |
dc.contributor.author | Wu, C.H. | |
dc.contributor.author | Li, M.-F. | |
dc.contributor.author | Zhu, C. | |
dc.contributor.author | Wang, S.J. | |
dc.contributor.author | Yoo, W.J. | |
dc.contributor.author | Hung, B.F. | |
dc.contributor.author | McAlister, S.P. | |
dc.date.accessioned | 2014-10-07T04:46:16Z | |
dc.date.available | 2014-10-07T04:46:16Z | |
dc.date.issued | 2005 | |
dc.identifier.citation | Yu, D.S.,Chin, A.,Wu, C.H.,Li, M.-F.,Zhu, C.,Wang, S.J.,Yoo, W.J.,Hung, B.F.,McAlister, S.P. (2005). Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 634-637. ScholarBank@NUS Repository. | |
dc.identifier.isbn | 078039268X | |
dc.identifier.issn | 01631918 | |
dc.identifier.uri | http://scholarbank.nus.edu.sg/handle/10635/83881 | |
dc.description.abstract | Metallic diffusion through high-k HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φm,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φm,eff of 4.15 and 4.9 eV are also obtained in Yb xSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature. © 2005 IEEE. | |
dc.source | Scopus | |
dc.type | Conference Paper | |
dc.contributor.department | ELECTRICAL & COMPUTER ENGINEERING | |
dc.description.sourcetitle | Technical Digest - International Electron Devices Meeting, IEDM | |
dc.description.volume | 2005 | |
dc.description.page | 634-637 | |
dc.description.coden | TDIMD | |
dc.identifier.isiut | NOT_IN_WOS | |
Appears in Collections: | Staff Publications |
Show simple item record
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.