Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference

Please use this identifier to cite or link to this item: https://scholarbank.nus.edu.sg/handle/10635/83881

Title:	Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference
Authors:	Yu, D.S. Chin, A. Wu, C.H. Li, M.-F. Zhu, C. Wang, S.J. Yoo, W.J. Hung, B.F. McAlister, S.P.
Issue Date:	2005
Citation:	Yu, D.S.,Chin, A.,Wu, C.H.,Li, M.-F.,Zhu, C.,Wang, S.J.,Yoo, W.J.,Hung, B.F.,McAlister, S.P. (2005). Lanthanide and Ir-based dual metal-Gate/HfAlON CMOS with large work-function difference. Technical Digest - International Electron Devices Meeting, IEDM 2005 : 634-637. ScholarBank@NUS Repository.
Abstract:	Metallic diffusion through high-k HfO2, caused by high temperature metal-nitride decomposition, was reduced by using robust HfAlON. Useful dual effective work-function (φm,eff) of 4.25 and 5.15 eV are obtained in TaTb0.2N/HfAlON and Ir/HfAlON at 1.7nm EOT. Good dual φm,eff of 4.15 and 4.9 eV are also obtained in Yb xSi/HfAlON and IrxSi/HfAlON FUSI-gates by reduced metal diffusion at lower temperature. © 2005 IEEE.
Source Title:	Technical Digest - International Electron Devices Meeting, IEDM
URI:	http://scholarbank.nus.edu.sg/handle/10635/83881
ISBN:	078039268X
ISSN:	01631918
Appears in Collections:	Staff Publications

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