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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 261-280 of 317 (Search time: 0.006 seconds).

Issue DateTitleAuthor(s)
261Feb-2004Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device ApplicationsYu, H.Y. ; Kang, J.F. ; Ren, C.; Chen, J.D. ; Hou, Y.T. ; Shen, C.; Li, M.F. ; Chan, D.S.H. ; Bera, K.L.; Tung, C.H.; Kwong, D.-L.
262Nov-1999Role of hole fluence in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.-J. ; Lo, K.F.; Xu, M.Z.
2632000Roles of primary hot hole and FN electron fluences in gate oxide breakdownLi, M.F. ; He, Y.D. ; Ma, S.G.; Cho, B.J. ; Lo, K.F.
2642007Scalability and reliability characteristics of cvd hf o2 gate dielectrics with HfN electrodes for advanced CMOS applicationsKang, J.F.; Yu, H.Y.; Ren, C.; Sa, N.; Yang, H.; Li, M.-F. ; Chan, D.S.H. ; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
2652005Scalability and reliability of TaN/HfN/HfO2 gate stacks fabricated by a high temperature processKang, J.F.; Yu, H.Y.; Ren, C.; Yang, H.; Sa, N.; Liu, X.Y.; Han, R.Q.; Li, M.-F. ; Chan, D.S.H. ; Kwong, D.-L.
2662004Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulationLiu, X.Y.; Du, G.; Xia, Z.L.; Kang, J.F.; Wang, Y.; Han, R.Q.; Yu, H.Y.; Li, M.-F. ; Kwong, D.L.
26717-Mar-2009Schottky barrier source/drain n-mosfet using ytterbium silicideZHU, SHIYANG ; CHEN, JINGDE ; LEE, SUNGJOO ; LI, MING FU ; SINGH, JAGAR; ZHU, CHUNXIANG ; KWONG, DIM-LEE 
2682004Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodesZhu, S. ; Chen, J. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Li, M.F. ; Lee, S.J. ; Zhu, C. ; Chan, D.S.H. ; Du, A.; Tung, C.H.; Singh, J.; Chin, A.; Kwong, D.L.
269May-2004Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrodeZhu, S. ; Yu, H.Y. ; Whang, S.J. ; Chen, J.H. ; Shen, C.; Zhu, C. ; Lee, S.J. ; Li, M.F. ; Chan, D.S.H. ; Yoo, W.J. ; Du, A.; Tung, C.H. ; Singh, J.; Chin, A.; Kwong, D.L.
2702004Selected topics on HfO 2 gate dielectrics for future ULSI CMOS devicesLi, M.F. ; Yu, H.Y. ; Hou, Y.T. ; Kang, J.F. ; Wang, X.P.; Shen, C.; Ren, C.; Yeo, Y.C. ; Zhu, C.X. ; Chan, D.S.H. ; Chin, A.; Kwong, D.L.
2712006SiGe amorphization during Ge condensation in silicon germanium on insulatorBalakumar, S.; Lo, G.Q.; Tung, C.H.; Kumar, R.; Balasubramanian, N.; Kwong, D.L.; Ong, C.S.; Li, M.F. 
2722001SIMS study of silicon oxynitride rapid thermally grown in nitric oxideLiu, R. ; Koa, K.H.; Wee, A.T.S. ; Lai, W.H.; Li, M.F. ; See, A.; Chan, L.
273Dec-2011Some issues in advanced CMOS gate stack performance and reliabilityLi, M.-F. ; Wang, X.P.; Shen, C.; Yang, J.J.; Chen, J.D. ; Yu, H.Y.; Zhu, C. ; Huang, D.
2742005Source/drain germanium condensation for P-channel strained ultra-thin body transistorsChui, K.-J.; Ang, K.-W.; Madan, A.; Wang, H.; Tung, C.-H.; Wong, L.-Y.; Wang, Y.; Choy, S.-F.; Balasubramanian, N.; Li, M.F. ; Samudra, G. ; Yeo, Y.-C. 
2752005Spectral features of LO phonon sidebands in luminescence of free excitons in GaNXu, S.J.; Li, G.Q.; Xiong, S.-J.; Tong, S.Y.; Che, C.M.; Liu, W.; Li, M.F. 
2762005Strain-induced very low noise RF MOSFETs on flexible plastic substrateKao, H.L.; Chin, A. ; Hung, B.F.; Lai, J.M.; Lee, C.F.; Li, M.-F. ; Samudra, G.S. ; Zhu, C. ; Xia, Z.L.; Liu, X.Y.; Kang, J.F.
277Jun-2007Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performanceAng, K.-W.; Chui, K.-J.; Madan, A.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G.S. ; Yeo, Y.-C. 
278Sep-2006Strained-SOI n-channel transistor with silicon-carbon source/drain regions for carrier transport enhancementChui, K.-J.; Ang, K.-W.; Chin, H.-C.; Shen, C.; Wong, L.-Y.; Tung, C.-H.; Balasubramanian, N.; Li, M.F. ; Samudra, G.S. ; Yeo, Y.-C. 
2792009Studies of NBTI in pMOSFETs with thermal and plasma nitrided SiON gate oxides by OFIT and FPM methodsLiu, W.J.; Huang, D.; Sun, Q.Q.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Li, M.-F. 
2801999Study of quasi-breakdown mechanism in ultra-thin gate oxide by using DCIV techniqueGuan, Hao; Cho, Byung Jin ; Li, M.F. ; He, Y.D. ; Xu, Zhen; Dong, Zhong