Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications

Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.820649

Title:	Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
Authors:	Yu, H.Y. Kang, J.F. Ren, C. Chen, J.D. Hou, Y.T. Shen, C. Li, M.F. Chan, D.S.H. Bera, K.L. Tung, C.H. Kwong, D.-L.
Keywords:	HfN HfO 2 High-K gate dielectrics Metal gate electrode MOS devices
Issue Date:	Feb-2004
Citation:	Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L. (2004-02). Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications. IEEE Electron Device Letters 25 (2) : 70-72. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.820649
Abstract:	In this letter, a thermally stable and high-quality HfN-HfO 2 gate stack for advanced MOS applications is reported for the first time. Negligible changes in both equivalent oxide thickness (EOT) and work function of HfN-HfO 2 gate stack are demonstrated even after 1000°C postmetal annealing (PMA), which is attributed to the superior oxygen diffusion barrier property of HfN as well as the thermal stability of the HfN-HfO 2 interface. Therefore, even without surface nitridation prior to HfO 2 deposition, the EOT of HfN-HfO 2 gate stack can be successfully scaled down to less than 10 Å after 1000°C PMA with excellent leakage and long-term reliability.
Source Title:	IEEE Electron Device Letters
URI:	http://scholarbank.nus.edu.sg/handle/10635/82988
ISSN:	07413106
DOI:	10.1109/LED.2003.820649
Appears in Collections:	Staff Publications

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