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Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.820649
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dc.titleRobust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
dc.contributor.authorYu, H.Y.
dc.contributor.authorKang, J.F.
dc.contributor.authorRen, C.
dc.contributor.authorChen, J.D.
dc.contributor.authorHou, Y.T.
dc.contributor.authorShen, C.
dc.contributor.authorLi, M.F.
dc.contributor.authorChan, D.S.H.
dc.contributor.authorBera, K.L.
dc.contributor.authorTung, C.H.
dc.contributor.authorKwong, D.-L.
dc.date.accessioned2014-10-07T04:35:54Z
dc.date.available2014-10-07T04:35:54Z
dc.date.issued2004-02
dc.identifier.citationYu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L. (2004-02). Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications. IEEE Electron Device Letters 25 (2) : 70-72. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.820649
dc.identifier.issn07413106
dc.identifier.urihttp://scholarbank.nus.edu.sg/handle/10635/82988
dc.description.abstractIn this letter, a thermally stable and high-quality HfN-HfO 2 gate stack for advanced MOS applications is reported for the first time. Negligible changes in both equivalent oxide thickness (EOT) and work function of HfN-HfO 2 gate stack are demonstrated even after 1000°C postmetal annealing (PMA), which is attributed to the superior oxygen diffusion barrier property of HfN as well as the thermal stability of the HfN-HfO 2 interface. Therefore, even without surface nitridation prior to HfO 2 deposition, the EOT of HfN-HfO 2 gate stack can be successfully scaled down to less than 10 Å after 1000°C PMA with excellent leakage and long-term reliability.
dc.description.urihttp://libproxy1.nus.edu.sg/login?url=http://dx.doi.org/10.1109/LED.2003.820649
dc.sourceScopus
dc.subjectHfN
dc.subjectHfO 2
dc.subjectHigh-K gate dielectrics
dc.subjectMetal gate electrode
dc.subjectMOS devices
dc.typeArticle
dc.contributor.departmentELECTRICAL & COMPUTER ENGINEERING
dc.description.doi10.1109/LED.2003.820649
dc.description.sourcetitleIEEE Electron Device Letters
dc.description.volume25
dc.description.issue2
dc.description.page70-72
dc.description.codenEDLED
dc.identifier.isiut000188807300008
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