Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2003.820649
Title: Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications
Authors: Yu, H.Y. 
Kang, J.F. 
Ren, C.
Chen, J.D. 
Hou, Y.T. 
Shen, C.
Li, M.F. 
Chan, D.S.H. 
Bera, K.L.
Tung, C.H.
Kwong, D.-L.
Keywords: HfN
HfO 2
High-K gate dielectrics
Metal gate electrode
MOS devices
Issue Date: Feb-2004
Source: Yu, H.Y., Kang, J.F., Ren, C., Chen, J.D., Hou, Y.T., Shen, C., Li, M.F., Chan, D.S.H., Bera, K.L., Tung, C.H., Kwong, D.-L. (2004-02). Robust High-Quality HfN-HfO 2 Gate Stack for Advanced MOS Device Applications. IEEE Electron Device Letters 25 (2) : 70-72. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2003.820649
Abstract: In this letter, a thermally stable and high-quality HfN-HfO 2 gate stack for advanced MOS applications is reported for the first time. Negligible changes in both equivalent oxide thickness (EOT) and work function of HfN-HfO 2 gate stack are demonstrated even after 1000°C postmetal annealing (PMA), which is attributed to the superior oxygen diffusion barrier property of HfN as well as the thermal stability of the HfN-HfO 2 interface. Therefore, even without surface nitridation prior to HfO 2 deposition, the EOT of HfN-HfO 2 gate stack can be successfully scaled down to less than 10 Å after 1000°C PMA with excellent leakage and long-term reliability.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/82988
ISSN: 07413106
DOI: 10.1109/LED.2003.820649
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