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https://scholarbank.nus.edu.sg/handle/10635/71705
| Title: | Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation | Authors: | Liu, X.Y. Du, G. Xia, Z.L. Kang, J.F. Wang, Y. Han, R.Q. Yu, H.Y. Li, M.-F. Kwong, D.L. |
Keywords: | GOI Monte Carlo Quantum effect Scaling |
Issue Date: | 2004 | Citation: | Liu, X.Y.,Du, G.,Xia, Z.L.,Kang, J.F.,Wang, Y.,Han, R.Q.,Yu, H.Y.,Li, M.-F.,Kwong, D.L. (2004). Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2 : 1186-1191. ScholarBank@NUS Repository. | Abstract: | The characteristics of both n- and p- GOI MOSFETs are simulated by 2D self-consistent full-band MC method based on quantum Boltzmann equation to evaluate the scaling behaviors between GOI and SOI MOSFETs. The simulation results indicate that both for n and p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary transport near source side especially for p channel device. But the surface roughness scattering is a critical issue that might suppress the non-stationary transport. SCE is serious in GOI devices and much thinner Ge layer has to use to optimize the performance. © 2004 IEEE. | Source Title: | International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT | URI: | http://scholarbank.nus.edu.sg/handle/10635/71705 |
| Appears in Collections: | Staff Publications |
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