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|Title:||Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation|
|Citation:||Liu, X.Y.,Du, G.,Xia, Z.L.,Kang, J.F.,Wang, Y.,Han, R.Q.,Yu, H.Y.,Li, M.-F.,Kwong, D.L. (2004). Scaling properties of GOI MOSFETs in naon scale by full band Monte Carlo simulation. International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT 2 : 1186-1191. ScholarBank@NUS Repository.|
|Abstract:||The characteristics of both n- and p- GOI MOSFETs are simulated by 2D self-consistent full-band MC method based on quantum Boltzmann equation to evaluate the scaling behaviors between GOI and SOI MOSFETs. The simulation results indicate that both for n and p channel GOI MOSFETs have favorable scaling properties in nano-scale due to the non-stationary transport near source side especially for p channel device. But the surface roughness scattering is a critical issue that might suppress the non-stationary transport. SCE is serious in GOI devices and much thinner Ge layer has to use to optimize the performance. © 2004 IEEE.|
|Source Title:||International Conference on Solid-State and Integrated Circuits Technology Proceedings, ICSICT|
|Appears in Collections:||Staff Publications|
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