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|Title:||Some issues in advanced CMOS gate stack performance and reliability||Authors:||Li, M.-F.
|Issue Date:||Dec-2011||Citation:||Li, M.-F., Wang, X.P., Shen, C., Yang, J.J., Chen, J.D., Yu, H.Y., Zhu, C., Huang, D. (2011-12). Some issues in advanced CMOS gate stack performance and reliability. Microelectronic Engineering 88 (12) : 3377-3384. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mee.2009.08.013||Abstract:||This paper summarizes and analyzes some of our previous works on the advanced gate stacks for CMOS transistors focused on the following two topics: 1. Frequency dependence of Dynamic Bias Temperature Instability (DBTI) and the transistor degradation mechanism, 2. A novel way for metal gate Effective Work Function (EWF) modulation by incorporation of lanthanum elements in HfO 2 gate dielectric. © 2009 Elsevier B.V. All rights reserved.||Source Title:||Microelectronic Engineering||URI:||http://scholarbank.nus.edu.sg/handle/10635/83036||ISSN:||01679317||DOI:||10.1016/j.mee.2009.08.013|
|Appears in Collections:||Staff Publications|
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