Please use this identifier to cite or link to this item: https://doi.org/10.1016/j.mee.2009.08.013
Title: Some issues in advanced CMOS gate stack performance and reliability
Authors: Li, M.-F. 
Wang, X.P.
Shen, C.
Yang, J.J.
Chen, J.D. 
Yu, H.Y.
Zhu, C. 
Huang, D.
Keywords: CMOS
Gate Stack
Reliability
Issue Date: Dec-2011
Source: Li, M.-F., Wang, X.P., Shen, C., Yang, J.J., Chen, J.D., Yu, H.Y., Zhu, C., Huang, D. (2011-12). Some issues in advanced CMOS gate stack performance and reliability. Microelectronic Engineering 88 (12) : 3377-3384. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mee.2009.08.013
Abstract: This paper summarizes and analyzes some of our previous works on the advanced gate stacks for CMOS transistors focused on the following two topics: 1. Frequency dependence of Dynamic Bias Temperature Instability (DBTI) and the transistor degradation mechanism, 2. A novel way for metal gate Effective Work Function (EWF) modulation by incorporation of lanthanum elements in HfO 2 gate dielectric. © 2009 Elsevier B.V. All rights reserved.
Source Title: Microelectronic Engineering
URI: http://scholarbank.nus.edu.sg/handle/10635/83036
ISSN: 01679317
DOI: 10.1016/j.mee.2009.08.013
Appears in Collections:Staff Publications

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