Please use this identifier to cite or link to this item:
https://doi.org/10.1016/j.mee.2009.08.013
| Title: | Some issues in advanced CMOS gate stack performance and reliability |
| Authors: | Li, M.-F. Wang, X.P. Shen, C. Yang, J.J. Chen, J.D. Yu, H.Y. Zhu, C. Huang, D. |
| Keywords: | CMOS Gate Stack Reliability |
| Issue Date: | Dec-2011 |
| Citation: | Li, M.-F., Wang, X.P., Shen, C., Yang, J.J., Chen, J.D., Yu, H.Y., Zhu, C., Huang, D. (2011-12). Some issues in advanced CMOS gate stack performance and reliability. Microelectronic Engineering 88 (12) : 3377-3384. ScholarBank@NUS Repository. https://doi.org/10.1016/j.mee.2009.08.013 |
| Abstract: | This paper summarizes and analyzes some of our previous works on the advanced gate stacks for CMOS transistors focused on the following two topics: 1. Frequency dependence of Dynamic Bias Temperature Instability (DBTI) and the transistor degradation mechanism, 2. A novel way for metal gate Effective Work Function (EWF) modulation by incorporation of lanthanum elements in HfO 2 gate dielectric. © 2009 Elsevier B.V. All rights reserved. |
| Source Title: | Microelectronic Engineering |
| URI: | http://scholarbank.nus.edu.sg/handle/10635/83036 |
| ISSN: | 01679317 |
| DOI: | 10.1016/j.mee.2009.08.013 |
| Appears in Collections: | Staff Publications |
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