Please use this identifier to cite or link to this item: https://doi.org/10.1109/LED.2007.896802
Title: Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance
Authors: Ang, K.-W.
Chui, K.-J.
Madan, A.
Wong, L.-Y.
Tung, C.-H.
Balasubramanian, N.
Li, M.-F. 
Samudra, G.S. 
Yeo, Y.-C. 
Keywords: Ge condensation
P-MOSFETs
Silicon-germanium (SiGe)
Strain
Issue Date: Jun-2007
Citation: Ang, K.-W., Chui, K.-J., Madan, A., Wong, L.-Y., Tung, C.-H., Balasubramanian, N., Li, M.-F., Samudra, G.S., Yeo, Y.-C. (2007-06). Strained thin-body p-MOSFET with condensed silicon-germanium source/ drain for enhanced drive current performance. IEEE Electron Device Letters 28 (6) : 509-512. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2007.896802
Abstract: Strained p-MOSFETs with silicon-germanium (SiGe) source and drain (S/D) stressors were fabricated on thin-body silicon-on-insulator (SOI) substrate using a novel local oxidation or Ge condensation technique. By directly growing SiGe on the S/D regions and followed by a local Ge condensation process, the challenges imposed on Si recess etch on thin-body SOI substrates can be alleviated. In the Ge condensation step, the Ge content in the S/D regions may also be increased. At a gate overdrive of - 1 V, strained p-MOSFETs show an enhancement in the saturation drive current Ion of up to 38% over the control p-MOSFETs. This significant Ion enhancement is attributed to strain-induced band structure modification, which reduces the hole effective mass along the transport direction. The improved series resistance of the strained devices with SiGe S/D accounted for approximately one-third of the on enhancement. © 2007 IEEE.
Source Title: IEEE Electron Device Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/83087
ISSN: 07413106
DOI: 10.1109/LED.2007.896802
Appears in Collections:Staff Publications

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