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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

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Department:  ELECTRICAL & COMPUTER ENGINEERING

Results 161-180 of 225 (Search time: 0.009 seconds).

Issue DateTitleAuthor(s)
1612005Negative- U property of oxygen vacancy in cubic Hf O 2Feng, Y.P. ; Lim, A.T.L. ; Li, M.F. 
1622005Negative- U property of oxygen vacancy in cubic Hf O 2Feng, Y.P. ; Lim, A.T.L. ; Li, M.F. 
1632005Negative- U property of oxygen vacancy in cubic Hf O 2Feng, Y.P. ; Lim, A.T.L. ; Li, M.F. 
1642005New developments in Schottky source/drain high-k/metal gate CMOS transistorsLi, M.-F. ; Lee, S. ; Zhu, S. ; Li, R.; Chen, J. ; Chin, A. ; Kwong, D.L.
52005New insights in hf based high-k gate dielectrics in mosfetsLi, M.-F. ; Zhu, C. ; Shen, C.; Yu, X.F.; Wang, X.P.; Feng, Y.P. ; Du, A.Y.; Yeo, Y.C. ; Samudra, G. ; Chin, A. ; Kwong, D.L. 
62009New insights of BTI degradation in MOSFETs with SiON gate dielectricsLi, M.-F. ; Huang, D.; Liu, W.J.; Liu, Z.Y.; Huang, X.Y.
7Oct-2007NMOS compatible work function of TaN metal gate with erbium-oxide-doped hafnium oxide gate dielectricChen, J. ; Wang, X.P.; Li, M.-F. ; Lee, S.J. ; Yu, M.B.; Shen, C.; Yeo, Y.-C. 
82007On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectricLiu, W.J.; Liu, Z.Y.; Huang, D.; Liao, C.C.; Zhang, L.F.; Gan, Z.H.; Wong, W.; Shen, C.; Li, M.-F. 
9Aug-2007P-Type floating gate for retention and P/E window improvement of flash memory devicesShen, C.; Pu, J. ; Li, M.-F. ; Cho, B.J. 
10Apr-2003Physical and electrical characteristics of HfN gate electrode for advanced MOS devicesYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C. ; Tung, C.H.; Du, A.Y.; Wang, W.D.; Chi, D.Z.; Kwong, D.-L.
11Jun-2006Physical and electrical characteristics of high-κ gate dielectric Hf(1-x)LaxOyWang, X.P.; Li, M.F. ; Chin, A. ; Zhu, C.X. ; Shao, J.; Lu, W.; Shen, X.C.; Yu, X.F.; Chi, R.; Shen, C.; Huan, A.C.H.; Pan, J.S.; Du, A.Y.; Lo, P.; Chan, D.S.H. ; Kwong, D.-L. 
121-Jul-2003Physical and electrical characterization of HfO2 metal-insulator-metal capacitors for Si analog circuit applicationsHu, H.; Zhu, C. ; Lu, Y.F. ; Wu, Y.H. ; Liew, T. ; Li, M.F. ; Cho, B.J. ; Choi, W.K. ; Yakovlev, N.
1315-Aug-2005Physical and electrical properties of lanthanide-incorporated tantalum nitride for n -channel metal-oxide-semiconductor field-effect transistorsRen, C.; Chan, D.S.H. ; Wang, X.P.; Faizhal, B.B.; Li, M.-F. ; Yeo, Y.-C. ; Trigg, A.D.; Agarwal, A.; Balasubramanian, N.; Pan, J.S.; Lim, P.C.; Huan, A.C.H.; Kwong, D.-L.
1428-Feb-2005Physical model for frequency-dependent dynamic charge trapping in metal-oxide-semiconductor field effect transistors with HfO 2 gate dielectricShen, C.; Li, M.F. ; Yu, H.Y. ; Wang, X.P.; Yeo, Y.-C. ; Chan, D.S.H. ; Kwong, D.-L.
151-Feb-2008Pseudo-potential band structure calculation of InSb ultra-thin films and its application to assess the n-metal-oxide-semiconductor transistor performanceZhu, Z.G.; Low, T.; Li, M.F. ; Fan, W.J.; Bai, P.; Kwong, D.L.; Samudra, G. 
16Jun-2003PVD HfO2 for high-precision MIM capacitor applicationsKim, S.J. ; Cho, B.J. ; Li, M.F. ; Yu, X.; Zhu, C. ; Chin, A.; Kwong, D.-L.
172002Quantum tunneling and scalability of HfO2 and HfAlO gate stacksHou, Y.T. ; Li, M.F. ; Yu, H.Y. ; Jin, Y.; Kwong, D.-L.
182003RF Passive Devices on Si with Excellent Performance Close to Ideal Devices Designed by Electro-Magnetic SimulationChin, A.; Chan, K.T.; Huang, C.H.; Chen, C.; Liang, V.; Chen, J.K.; Chien, S.C.; Sun, S.W.; Duh, D.S.; Lin, W.J.; Zhu, C. ; Li, M.F. ; McAlister, S.P.; Kwong, D.-L.
19Jun-2004RF, DC, and reliability characteristics of ALD HfO2-Al2O3 laminate MIM capacitors for Si RF IC applicationsDing, S.-J. ; Hu, H.; Zhu, C. ; Kim, S.J. ; Yu, X.; Li, M.-F. ; Cho, B.J. ; Chan, D.S.H. ; Yu, M.B.; Rustagi, S.C.; Chin, A.; Kwong, D.-L.
202003Robust HfN Metal Gate Electrode for Advanced MOS Devices ApplicationYu, H.Y. ; Lim, H.F. ; Chen, J.H. ; Li, M.F. ; Zhu, C.X. ; Kwong, D.-L.; Tung, C.H.; Bera, K.L.; Leo, C.J.