On-the-fly interface trap measurement and its impact on the understanding of NBTI mechanism for p-MOSFETs with SiON gate dielectric

Abstract

For the first time, we developed an on-the-fly method OFIT to measure the interface trap density NIT without recovery during measurement. The OFIT produces the most reliable experimental data of the interface trap generation dynamics under stress and therefore provides a solid ground to check various modeling work. The slope n of tn time evolution of ΔNIT under stress is temperature dependent, supporting dispersive Hydrogen transport in the oxide. Comparing OFIT data with the data measured by ultra-fast pulsed Vth measurement, we successfully decompose the NBTI ΔVTH into interface trap component ΔVTH IT and oxide charge component ΔV TH OX quantitatively for the p-MOSFETs with SiON gate dielectric. © 2007 IEEE.