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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 21-40 of 300 (Search time: 0.005 seconds).

Issue DateTitleAuthor(s)
212004A novel surface passivation process for HfO 2 Ge MOSFETsWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Du, A.Y.; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
2211-Jun-2008A pseudopotential method for investigating the surface roughness effect in ultrathin body transistorsZhu, Z.-G.; Liang, G. ; Li, M.-F. ; Samudra, G. 
32002A robust and production worthy addressable array architecture for deep sub-micron MOSFET's matching characterizationYeo, S.B.; Bordelon, J.; Chu, S.; Li, M.F. ; Tranchina, B.A.; Harward, M.; Chan, L.H.; See, A.
4Dec-2001A simple and efficient model for quantization effects of hole inversion layers in MOS devicesHou, Y.-T. ; Li, M.-F. 
52000A study of quasi-breakdown mechanism in ultrathin gate oxide under various types of stressGuan, H.; Xu, Z.; Cho, B.J. ; Li, M.F. ; He, Y.D. 
6Sep-2004A TaN-HfO2-Ge pMOSFET with novel SiH4 surface passivationWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Du, A.; Balasubramanian, N.; Li, M.F. ; Chin, A.; Sin, J.K.O.; Kwong, D.-L.
7Aug-2000A thorough study of quasi-breakdown phenomenon of thin gate oxide in dual-gate CMOSFET'sGuan, H.; Li, M.-F. ; He, Y. ; Cho, B.J. ; Dong, Z.
8Dec-1996A transient capacitance-voltage method for characterizing DX centresJia, Y.B.; Grimmeiss, H.G.; Li, M.F. 
92004A tunable and program-erasable capacitor on Si with excellent tuning memoryLai, C.H.; Lee, C.F.; Chin, A.; Zhu, C. ; Li, M.F. ; McAlister, S.P.; Kwong, D.L.
102005Advanced MOSFETs using HfTaON/SiO2 gate dielectric and TaN metal gate with excellent performances for low standby power applicationYu, X.; Zhu, C. ; Yu, M.; Li, M.F. ; Chin, A.; Tung, C.H.; Gui, D.; Kwong, D.-L.
112007Advanced Ni-based FUlly SIlicidation (FUSI) technology for sub-45nm CMOS devicesYu, H.Y.; Li, M.F. ; Lauwers, A.; Kittl, J.A.; Singanamalla, R.; Veloso, A.; Hoffmann, T.; De Meyer, K.; Jurczak, M.; Absil, P.; Biesemans, S.
12Mar-2004Al 2O 3-Ge-On-Insulator n- and p-MOSFETs With Fully NiSi and NiGe Dual GatesYu, D.S.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Kwong, D.-L.
131-Nov-2004Alternative surface passivation on germanium for metal-oxide-semiconductor applications with high-k gate dielectricWu, N.; Zhang, Q.; Zhu, C. ; Chan, D.S.H. ; Li, M.F. ; Balasubramanian, N.; Chin, A.; Kwong, D.-L.
141998An analysis of temperature dependent photoluminescence line shapes in InGaNTeo, K.L.; Colton, J.S.; Yu, P.Y.; Weber, E.R.; Li, M.F. ; Liu, W.; Uchida, K.; Tokunaga, H.; Akutsu, N.; Matsumoto, K.
1521-Feb-2000An analysis of temperature dependent piezoelectric Franz-Keldysh effect in AlGaNHou, Y.T. ; Teo, K.L. ; Li, M.F. ; Uchida, K.; Tokunaga, H.; Akutsu, N.; Matsumoto, K.
161997An anomalous temperature dependence of the electron-acceptor recombination in heavily Si-doped GaAs/AlAs quantum wellsZhang, Y.; Li, M. ; Liu, W.; Yen, A.C.; Sheng, T.T.; Zhao, S.P.; Wang, J.L.F.
171997An improved tuning circuit for continuous-time filtersJiun, F.S.; Tan, K.-S.; Fu, L.M. 
182000An XPS study of silicon oxynitride rapid thermally grown in nitric oxideLai, W.H.; Li, M.F. ; Pan, J.S.; Liu, R. ; Chan, L.; Chua, T.C.
192003Analysis of Charge Trapping and Breakdown Mechanism in High-K Dielectrics with Metal Gate Electrode Using Carrier SeparationLoh, W.Y. ; Cho, B.C. ; Joo, M.S. ; Li, M.F. ; Chan, D.S.H. ; Mathew, S.; Kwong, D.-L.
2015-Aug-1998Analysis of optical gain and threshold current density of wurtzite InGaN/GaN/AlGaN quantum well lasersYeo, Y.C. ; Chong, T.C. ; Li, M.F. ; Fan, W.J.