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|Title:||An analysis of temperature dependent photoluminescence line shapes in InGaN||Authors:||Teo, K.L.
|Issue Date:||1998||Citation:||Teo, K.L., Colton, J.S., Yu, P.Y., Weber, E.R., Li, M.F., Liu, W., Uchida, K., Tokunaga, H., Akutsu, N., Matsumoto, K. (1998). An analysis of temperature dependent photoluminescence line shapes in InGaN. Applied Physics Letters 73 (12) : 1697-1699. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122249||Abstract:||Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ∼7 meV as compared with an activation energy of ∼63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins. © 1998 American Institute of Physics.||Source Title:||Applied Physics Letters||URI:||http://scholarbank.nus.edu.sg/handle/10635/61790||ISSN:||00036951||DOI:||10.1063/1.122249|
|Appears in Collections:||Staff Publications|
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