Please use this identifier to cite or link to this item: https://doi.org/10.1063/1.122249
Title: An analysis of temperature dependent photoluminescence line shapes in InGaN
Authors: Teo, K.L.
Colton, J.S.
Yu, P.Y.
Weber, E.R.
Li, M.F. 
Liu, W.
Uchida, K.
Tokunaga, H.
Akutsu, N.
Matsumoto, K.
Issue Date: 1998
Source: Teo, K.L., Colton, J.S., Yu, P.Y., Weber, E.R., Li, M.F., Liu, W., Uchida, K., Tokunaga, H., Akutsu, N., Matsumoto, K. (1998). An analysis of temperature dependent photoluminescence line shapes in InGaN. Applied Physics Letters 73 (12) : 1697-1699. ScholarBank@NUS Repository. https://doi.org/10.1063/1.122249
Abstract: Photoluminescence (PL) line shapes in InGaN multiple quantum well structures have been studied experimentally and theoretically between 10 and 300 K. The higher temperature PL spectra can be fitted quantitatively with a thermalized carrier distribution and a broadened joint-density-of-states. The low temperature PL line shapes suggest that carriers are not thermalized, as a result of localization by band-gap fluctuations. We deduce a localization energy of ∼7 meV as compared with an activation energy of ∼63 meV from thermal quenching of the PL intensity. We thus conclude that this activation energy and the band-gap fluctuation most likely have different origins. © 1998 American Institute of Physics.
Source Title: Applied Physics Letters
URI: http://scholarbank.nus.edu.sg/handle/10635/61790
ISSN: 00036951
DOI: 10.1063/1.122249
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