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Li Ming-Fu

rp01527

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Full Name
Li Ming-Fu
(not current staff)
Variants
MINGFU, LI
Li, M.-F.
LI, MING FU
MINGFU LI N.
Mingfu, L.
Fu, L.M.
MINGFU LI
Li, M.F.
Li, Ming Fu
Li, M.
Li, M.-f.
 
Main Affiliation
 
Faculty
 
Email
elelimf@nus.edu.sg
 

Publications

Results 141-160 of 300 (Search time: 0.011 seconds).

Issue DateTitleAuthor(s)
141May-2003High-density MIM capacitors using AlTaOx dielectricsYang, M.Y.; Huang, C.H.; Chin, A.; Zhu, C. ; Li, M.F. ; Kwong, D.-L.
1422007High-k gate stack formation on strained SiGe substrate for MOSFET applicationsZhu, C. ; Li, M.F. ; Huang, J.; Fu, J.
1432004HiGH-kappa; MIM capacitors with atomic-layer-deposited HfO 2-Al2O3 laminated and sandwiched dielectrics for analog circuit applicationsDing, S.-J. ; Zhu, C. ; Li, M.-F. ; Cho, B.J. ; Kwong, D.-L.
144Sep-2003High-performance microwave coplanar bandpass and bandstop filters on Si substratesChan, K.T.; Chin, A.; Li, M.-F. ; Kwong, D.-L.; McAlister, S.P.; Duh, D.S.; Lin, W.J.; Chang, C.Y.
145Dec-2003High-Performance MIM Capacitor Using ALD High-κ HfO 2-Al2O3 Laminate DielectricsDing, S.-J. ; Hu, H.; Lim, H.F. ; Kim, S.J. ; Yu, X.F.; Zhu, C. ; Li, M.F. ; Cho, B.J. ; Chan, D.S.H. ; Rustagi, S.C.; Yu, M.B.; Chin, A.; Kwong, D.-L.
146Apr-2007High-temperature stable HfLaON p-MOSFETs with high-work-function Ir 3Si gateWu, C.H.; Hung, B.F.; Chin, A.; Wang, S.J.; Wang, X.P.; Li, M.-F. ; Zhu, C. ; Yen, F.Y.; Hou, Y.T.; Jin, Y.; Tao, H.J.; Chen, S.C.; Liang, M.S.
147Jun-2001Hole quantization effects and threshold voltage shift in pMOSFET - Assessed by improved one-band effective mass approximationHou, Y.T. ; Li, M.-F. 
148May-2002Hole tunneling current through oxynitride/oxide stack and the stack optimization for p-MOSFETsYu, H.Y. ; Hou, Y.T. ; Li, M.F. ; Kwong, D.-L.
1492007Hot carrier reliability of strained N-MOSFET with lattice mismatched source/drain stressorsAng, K.-W.; Wan, C.; Chui, K.-J.; Tung, C.-H.; Balasubramanian, N.; Li, M.-F. ; Samudra, G. ; Yeo, Y.-C. 
1502004Impact of metal gate work function on nano CMOS device performanceHou, Y.T. ; Low, T.; Xu, B.; Li, M.-F. ; Samudra, G. ; Kwong, D.L.
1512004Impact of surface roughness on silicon and Germanium ultra-thin-body MOSFETsLow, T.; Li, M.F. ; Fan, W.J.; Ng, S.T.; Yeo, Y.-C. ; Zhu, C. ; Chin, A. ; Chan, L.; Kwong, D.L.
152Feb-2000Improved cross-coupled quad transconductor cellLim, Y.C. ; Lai, W.H.; Zhang, X.W.; Li, M.F. 
1531997Improved cross-coupled quad transconductor cellLai, W.H.; Lim, Y.C. ; Li, M.F. 
154Apr-2005Improved electrical and reliability characteristics of hfn-hfo2-gated nMOSFET with 0.95-nm EOT fabricated using a gate-first processKang, F.J.; Yu, H.Y. ; Ren, C.; Wang, X.P.; Li, M.-F. ; Chan, D.S.H. ; Yeo, Y.-C. ; Sa, N.; Yang, H.; Liu, X.Y.; Han, R.Q.; Kwong, D.-L.
155May-2003Improved one-band self-consistent effective mass methods for hole quantization in p-MOSFETLow, T.; Hou, Y.-T. ; Li, M.-F. 
1562009Improved retention and cycling characteristics of MONOS memory using charge-trapping engineeringChin, A.; Lin, S.H.; Yang, H.J.; Tsai, C.Y.; Yeh, F.S.; Liao, C.C.; Li, M.-F. 
157Aug-2004Improvement of voltage linearity in high-κ MIM capacitors using HfO2-SiO2 stacked dielectricKim, S.J. ; Cho, B.J. ; Li, M.-F. ; Ding, S.-J. ; Zhu, C. ; Yu, M.B.; Narayanan, B.; Chin, A.; Kwong, D.-L.
15815-Nov-1999Influence of Si doping on the infrared reflectance characteristics of GaN grown on sapphireHou, Y.T. ; Feng, Z.C.; Chua, S.J. ; Li, M.F. ; Akutsu, N.; Matsumoto, K.
159Nov-1999Infrared reflectance investigation of undoped and Si-doped GaN films on sapphireFeng, Z.C.; Hou, Y.T. ; Li, M.F. ; Chua, S.J. ; Wang, W.; Zhu, L.
1601999Infrared reflectance studies of GaN epitaxial films on sapphire substrateFeng, Z.C.; Hou, Y.T. ; Chua, S.J. ; Li, M.F.