Improved retention and cycling characteristics of MONOS memory using charge-trapping engineering

Please use this identifier to cite or link to this item: https://doi.org/10.1109/IPFA.2009.5232561

Title:	Improved retention and cycling characteristics of MONOS memory using charge-trapping engineering
Authors:	Chin, A. Lin, S.H. Yang, H.J. Tsai, C.Y. Yeh, F.S. Liao, C.C. Li, M.-F.
Issue Date:	2009
Citation:	Chin, A.,Lin, S.H.,Yang, H.J.,Tsai, C.Y.,Yeh, F.S.,Liao, C.C.,Li, M.-F. (2009). Improved retention and cycling characteristics of MONOS memory using charge-trapping engineering. Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA : 641-645. ScholarBank@NUS Repository. https://doi.org/10.1109/IPFA.2009.5232561
Abstract:	The shallow trap energy in SONOS Charge-Trapping Flash (CTF) is the fundamental challenge for required good retention, especially at elevated temperatures. Although the high temperature retention can be improved by BE-SONOS, this is traded off the slow erase speed. To address these issues, we have fabricated a new Charge-Trapping-Engineered Flash (CTEF) using deep trapping high- dielectric to replace Si3N4. At l500C, the CTEF device shows a large 5.6 V initial memory window and a 3.8 V 10-year extrapolated retention for 4-bits/cell MLC, under very fast 100 sand ±16 V program/erase condition. © 2009 IEEE.
Source Title:	Proceedings of the International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA
URI:	http://scholarbank.nus.edu.sg/handle/10635/70557
ISBN:	9781424439102
DOI:	10.1109/IPFA.2009.5232561
Appears in Collections:	Staff Publications

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