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Samudra,Ganesh S

rp00141

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

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Author:  Samudra, G.
Department:  ELECTRICAL AND COMPUTER ENGINEERING

Results 101-120 of 271 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
1012004Impact of metal gate work function on nano CMOS device performanceHou, Y.T. ; Low, T.; Xu, B.; Li, M.-F. ; Samudra, G. ; Kwong, D.L.
1022012Impact of TSV induced thermo-mechanical stress on semiconductor device performanceLee, H.M.; Liu, E.-X.; Samudra, G.S. ; Li, E.-P.
103Jun-2008In situ surface passivation and CMOS-compatible palladium-germanium contacts for surface-channel gallium arsenide MOSFETsChin, H.-C.; Zhu, M. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
1042008In-situ surface passivation and metal-gate/high-k dielectric stack formation for N-channel gallium arsenide metal-oxide-semiconductor field-effect transistorsChin, H.-C.; Zhu, M. ; Whang, S.-J. ; Tung, C.-H.; Samudra, G.S. ; Yeo, Y.-C. 
1052007Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processingLiu, F.; Tan, K.-M.; Wang, X.; Low, D.K.Y.; Lai, D.M.Y.; Lim, P.C.; Samudra, G. ; Yeo, Y.-C. 
106Nov-2012Influence of contact doping on graphene nanoribbon heterojunction tunneling field effect transistorsDa, H. ; Lam, K.-T.; Samudra, G.S. ; Liang, G. ; Chin, S.-K.
1072013Influences of gate drive on pulsed current collapse recovery in AlGaN/GaN power HEMTsLi, Y.; Liang, Y.C. ; Samudra, G.S. ; Huang, H.; Yeo, Y.-C. 
1082007Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistorsAgrawal, N.; Chen, J. ; Hui, Z.; Yeo, Y.-C. ; Lee, S. ; Chan, D.S.H. ; Li, M.-F. ; Samudra, G.S. 
1092007Interface dipole mechanism and NMOS Ni-FUSI gate work function engineering using rare-earth metal (RE)-based dielectric interlayersLim, A.E.-J.; Fang, W.-W.; Liu, F.; Lee, R.T.P. ; Samudra, G.S. ; Kwong, D.-L. ; Yeo, Y.-C. 
110Oct-2005Interface trap passivation effect in NBTI measurement for p-MOSFET with SiON gate dielectricYang, T.; Shen, C.; Li, M.F. ; Ang, C.H.; Zhu, C.X. ; Yeo, Y.-C. ; Samudra, G. ; Kwong, D.-L.
1112003Investigation of Performance Limits of Germanium Double-Gated MOSFETsLow, T.; Hou, Y.T. ; Li, M.F. ; Zhu, C. ; Chin, A.; Samudra, G. ; Chan, L.; Kwong, D.-L.
11228-Feb-2005Lattice strain analysis of transistor structures with silicon-germanium and silicon-carbon sourcedrain stressorsAng, K.-W.; Chui, K.-J.; Bliznetsov, V.; Tung, C.-H.; Du, A.; Balasubramanian, N.; Samudra, G. ; Li, M.F. ; Yeo, Y.-C. 
1132005Long retention and low voltage operation using IrO2/HfAlO/HfSiO/ HfAlO gate stack for memory applicationWang, Y.Q.; Singh, P.K.; Yoo, W.J. ; Yeo, Y.C. ; Samudra, G. ; Chin, A.; Hwang, W.S.; Chen, J.H. ; Wang, S.J.; Kwong, D.-L.
114Jul-2005Low noise RF MOSFETs on flexible plastic substratesKao, H.L.; Chin, A. ; Hung, B.F.; Lee, C.F.; Lai, J.M.; McAlister, S.P.; Samudra, G.S. ; Yoo, W.J. ; Chi, C.C.
1152008Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidationWong, H.-S.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
1162005Low voltage high speed SiO2/AlGaN/AlLaO3/TaN memory with good retentionChin, A. ; Laio, C.C.; Chen, C.; Chiang, K.C.; Yu, D.S.; Yoo, W.J. ; Samudra, G.S. ; Wang, T.; Hsieh, I.J.; McAlister, S.P.; Chi, C.C.
1172007Material and electrical characterization of nickel silicide-carbon as contact metal to silicon-carbon source and drain stressorsLee, R.T.P. ; Yang, L.-T.; Ang, K.-W.; Liow, T.-Y.; Tan, K.-M.; Wong, A.S.-W.; Samudra, G.S. ; Chi, D.-Z.; Yeo, Y.-C. 
118May-1995Measurement and simulation of hot carrier degradation in PMOSFET by gate capacitanceLing, C.H. ; Seah, B.P.; Samudra, Ganesh S. ; Gan, Chock H.
119Apr-2011Mechanism of stress memorization technique (SMT) and method to maximize its effectPandey, S.M.; Liu, J.; Hooi, Z.S.; Flachowsky, S.; Herrmann, T.; Tao, W.; Benistant, F.; See, A.; Chu, S.; Samudra, G.S. 
1202007Metal-gate work function modulation using hafnium alloys obtained by the interdiffusion of thin metallic layersLim, A.E.-J.; Hwang, W.S.; Wang, X.P.; Lai, D.M.Y.; Samudra, G.S. ; Kwong, D.-L.; Yeo, Y.-C.