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Samudra,Ganesh S

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Full Name
Samudra,Ganesh S
Variants
Samudra, G.G.
SAMUDRA, GANESH SHANKAR
Samudra', G.S.
Samudra, Ganesh S.
Samudra, Ganesh Shankar
Shankar Samudra, Ganesh
Samudra, G.S.
Samudra, Ganesh
Samudra, G.
 
Main Affiliation
 
Faculty
 
Email
eleshanr@nus.edu.sg
 

Publications

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Author:  Samudra, G.
Department:  ELECTRICAL AND COMPUTER ENGINEERING

Results 41-60 of 271 (Search time: 0.007 seconds).

Issue DateTitleAuthor(s)
412010Carrier transport characteristics of strained N-MOSFET featuring channel proximate silicon-carbon source/drain stressors for performance boostKoh, S.-M.; Zhang, P.; Ren, S.-F.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C. 
422006Carrier transport characteristics of Sub-30 nm strained N-channel FinFETs featuring silicon-carbon source/drain regions and methods for further performance enhancementLiow, T.-Y.; Tan, K.-M.; Chin, H.-C.; Lee, R.T.P. ; Tung, C.-H.; Samudra, G.S. ; Balasubramanian, N.; Yeo, Y.-C. 
4319-Jul-2010Carrier transport in strained N-channel field effect transistors with channel proximate silicon-carbon source/drain stressorsKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
442009Characterization and modeling of subfemtofarad nanowire capacitance using the CBCM techniqueZhao, H.; Kim, R.; Paul, A.; Luisier, M.; Klimeck, G.; Ma, F.-J. ; Rustagi, S.C.; Samudra, G.S. ; Singh, N.; Lo, G.-Q.; Kwong, D.-L.
452006Characterization and physical origin of fast vth Transient in NBTI of pMOSFETs with SiON dielectricShen, C.; Li, M.-F. ; Foo, C.E.; Yang, T.; Huang, D.M.; Yaps, A.; Samudra, G.S. ; Yeo, Y.-C. 
462009Charge-based capacitance measurement technique for nanoscale devices: Accuracy assessment based on TCAD simulationsZhao, H.; Rustagi, S.C.; Ma, F.-J. ; Samudra, G.S. ; Singh, N.; Lo, G.Q.; Kwong, D.-L.
47Jul-2008Cointegration of in situ doped silicon-carbon source and silicon-carbon I-region in P-channel silicon nanowire impact-ionization transistorToh, E.-H.; Wang, G.H.; Chan, L.; Weeks, D.; Bauer, M.; Spear, J.; Thomas, S.G.; Samudra, G. ; Yeo, Y.-C. 
482008Compact HSPICE model for IMOS deviceLin, J. ; Toh, E.H.; Shen, C.; Sylvester, D.; Heng, C.H. ; Samudra, G. ; Yeo, Y.C. 
49May-2000Comparative analysis of minimum surface potential and location of barrier peaks in various Si MOSFET devicesSamudra, G. ; Rajendran, K.
5025-Apr-2008Concept of strain-transfer-layer and integration with graded silicon-germanium source/drain stressors for p-type field effect transistor performance enhancementWang, G.H.; Toh, E.-H.; Tung, C.-H.; Tripathy, S.; Samudra, G.S. ; Yeo, Y.-C. 
512009Contact resistance reduction technology using selenium egregation for N-MOSFETs with silicon-carbon source/drainWong, H.-S.; Ang, K.-W.; Chan, L.; Samudra, G. ; Yeo, Y.-C. 
52Apr-2012Contact technology for strained nFinFETs with silicon-carbon source/drain stressors featuring sulfur implant and segregationKoh, S.-M.; Samudra, G.S. ; Yeo, Y.-C. 
53Nov-2011Contact-resistance reduction for strained n-FinFETs with silicon-carbon source/drain and platinum-based silicide contacts featuring tellurium implantation and segregationKoh, S.-M.; Kong, E.Y.-J.; Liu, B.; Ng, C.-M.; Samudra, G.S. ; Yeo, Y.-C. 
54Jul-2007Design of gradient oxide-bypassed superjunction power MOSFET devicesChen, Y.; Liang, Y.C. ; Samudra, G.S. 
551998Design of integrated current sensor for lateral IGBT power devicesLiang, Y.C. ; Samudra, G.S. ; Hor, V.S.S.
562013Design of novel normally-off AlGaN/GaN HEMTs with combined gate recess and floating charge structuresHuang, H.; Liang, Y.C. ; Samudra, G.S. ; Huang, C.-F.
572005Design of superjunction power MOSFET devices using the gradient oxide-bypassed structureChen, Y.; Liang, Y.C. ; Samudra, G.S. 
58May-1996Determination of LDD MOSFET drain resistance from device simulationSamudra, G.S. ; Seah, B.P.; Ling, C.H. 
5925-Apr-2008Device design and scalability of a double-gate tunneling field-effect transistor with silicon - germanium sourceToh, E.-H.; Wang, G.H.; Chan, L.; Sylvester, D.; Heng, C.-H. ; Samudra, G.S. ; Yeo, Y.-C. 
60Nov-2010Device physics and characteristics of graphene nanoribbon tunneling FETsChin, S.-K.; Seah, D.; Lam, K.-T.; Samudra, G.S. ; Liang, G.